- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383992 > TE28F008BET120 (Intel Corp.) 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY PDF資料下載
參數(shù)資料
| 型號： | TE28F008BET120 |
| 廠商： | Intel Corp. |
| 英文描述： | 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 8兆位（為512k × 16，1024K × 8）SmartVoltage啟動塊閃存系列 |
| 文件頁數(shù)： | 30/48頁 |
| 文件大小： | 304K |
| 代理商： | TE28F008BET120 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁當前第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁
SMART 3 ADVANCED BOOT BLOCK
E
30
PRELIMINARY
4.6
AC Characteristics
—Write Operations
(1)
Product
3.0 V
– 3.6 V
80
100
2.7 V – 3.6 V
90
110
#
Symbol
t
PHWL
/
t
PHEL
t
ELWL
/
t
WLEL
t
ELEH
/
t
WLWH
t
DVWH
/
t
DVEH
t
AVWH
/
t
AVEH
t
WHEH
/
t
EHWH
t
WHDX
/
t
EHDX
t
WHAX
/
t
EHAX
t
WHWL
/
t
EHEL
t
VPWH
/
t
VPEH
Parameter
Note
Min
Min
Min
Min
Unit
W1
RP# High Recovery to WE#
(CE#) Going Low
600
600
600
600
ns
W2
CE# (WE#) Setup to WE#
(CE#) Going Low
0
0
0
0
ns
W3
WE# (CE#) Pulse Width
4
70
70
70
70
ns
W4
Data Setup to WE# (CE#)
Going High
2
50
50
60
60
ns
W5
Address Setup to WE# (CE#)
Going High
2
70
70
70
70
ns
W6
CE# (WE#) Hold Time from
WE# (CE#) High
0
0
0
0
ns
W7
Data Hold Time from WE#
(CE#) High
2
0
0
0
0
ns
W8
Address Hold Time from WE#
(CE#) High
2
0
0
0
0
ns
W9
WE# (CE#) Pulse Width High
4
30
30
30
30
ns
W10
V
Setup to WE# (CE#) Going
High
3
200
200
200
200
ns
W11
t
QVVL
V
PP
Hold from Valid SRD
3
0
0
0
0
ns
NOTES:
1.
2.
3.
4. Write pulse width (t
) is defined from CE# or WE# going low (whichever goes low last)
to CE# or WE# going high
(whichever goes high first). Hence, t
= t
= t
= t
= t
. Similarly, Write pulse width high (t
) is defined
from CE# or WE# going high (whichever goes high first)
to CE# or WE# going low (whichever goes low first). Hence, t
WPH
=
t
WHWL
= t
EHEL
= t
WHEL
= t
EHWL
.
Read timing characteristics during program suspend and erase suspend are the same as during read-only operations.
Refer to command definition table (Table 6) for valid A
IN
or D
IN
.
Sampled, but not 100% tested.
相關PDF資料 |
PDF描述 |
|---|---|
| TE28F020-90 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; No. of Contacts:8; Connector Shell Size:13; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight |
| TE28F020-120 | 28F020 2048K (256K X 8) CMOS FLASH MEMORY |
| TE28F020-150 | 28F020 2048K (256K X 8) CMOS FLASH MEMORY |
| TE28F128P30T85 | Intel StrataFlash Embedded Memory |
| TE28F128P30xxx | Intel StrataFlash Embedded Memory |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F008BVB90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TE28F008BVT90 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Intel 功能描述: |
| TE28F008C3B110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F008C3B90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F008C3T110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
發(fā)布緊急采購，3分鐘左右您將得到回復。