參數(shù)資料
型號(hào): TE28F004BX-B80
廠商: INTEL CORP
元件分類(lèi): DRAM
英文描述: Series RR3112 round rocker switches have an ergonomic feel and multiple circuit options
中文描述: 512K X 8 FLASH 12V PROM, 80 ns, PDSO40
封裝: 20 X 10 MM, TSOP-40
文件頁(yè)數(shù): 9/58頁(yè)
文件大?。?/td> 920K
代理商: TE28F004BX-B80
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
3UHOLPLQDU\
3
2.0
Product Description
This section explains device pin description and package pinouts.
2.1
Package Pinouts
The 3 Volt Advanced Boot Block flash memory is available in 40-lead TSOP (x8,
Figure 1
),
48-lead TSOP (x16,
Figure 2
) and 48-ball
μ
BGA(x8 and x16,
Figure 3
and
Figure 4
, respectively)
and 48-ball VF BGA (x16,
Figure 4
) packages. In all figures, pin changes necessary for density
upgrades have been circled.
0580_01
NOTES:
1. 40-Lead TSOP available for 8- and 16-Mbit densities only.
2. Lower densities will have NC on the upper address pins. For example, an 8-Mbit device will have NC on
Pin 38.
Figure 1. 40-Lead TSOP Package for x8 Configurations
A
GND
A
20
A
19
A
10
DQ
7
DQ
6
DQ
5
DQ
4
V
CCQ
V
CC
NC
DQ
3
DQ
2
DQ
1
DQ
0
OE#
GND
CE#
A
0
A
16
A
15
A
14
A
13
A
12
A
11
A
9
A
WE#
RP#
V
WP#
A
18
A
7
A
6
A
5
A
4
A
3
A
2
A
1
16 M
8 M
Advanced Boot Block
40-Lead TSOP
10 mm x 20 mm
TOP VIEW
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
4 M
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