參數(shù)資料
型號: TDA8510
廠商: NXP Semiconductors N.V.
英文描述: 26 W BTL and 2 x 13 W SE power amplifiers
中文描述: 26糯橋接和2 x 13 W功率東南功率放大器
文件頁數(shù): 9/16頁
文件大小: 82K
代理商: TDA8510
1999 Dec 14
9
Philips Semiconductors
Preliminary specification
26 W BTL and 2
×
13 W SE power
amplifiers
TDA8510J
AC CHARACTERISTICS
V
P
= 15 V; f = 1 kHz; T
amb
= 25
°
C; measure in Fig.7; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BTL channel
P
o
output power
note 1
THD = 0.5%
THD = 10%
P
o
= 1 W
THD = 0.5%;
P
o
=
1 dB; with respect to 16 W
at
1 dB; note 2
at
1 dB
16
22
20
26
0.06
20 to
15000
25
26
W
W
%
Hz
THD
B
total harmonic distortion
power bandwidth
f
ro(l)
f
ro(h)
G
v
SVRR
low frequency roll-off
high frequency roll-off
closed loop voltage gain
supply voltage ripple rejection
20
25
27
Hz
kHz
dB
note 3
on
mute
standby
48
46
80
25
40
30
70
100
60
60
38
200
dB
dB
dB
k
μ
V
μ
V
μ
V
dB
Z
i
V
n(o)
input impedance
noise output voltage
on; R
s
= 0
; note 4
on; R
s
= 10 k
; note 4
mute; notes 4 and 5
R
s
= 10 k
α
cs
D
YNAMIC DISTORTION DETECTOR
channel separation
THD
total harmonic distortion
V
16
0.6 V; no short-circuit
10
%
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