參數(shù)資料
型號(hào): TDA8350
廠商: NXP Semiconductors N.V.
英文描述: DC-coupled vertical deflection and East-West output circuit
中文描述: DC耦合垂直偏轉(zhuǎn)和東,西輸出電路
文件頁數(shù): 2/16頁
文件大?。?/td> 115K
代理商: TDA8350
January 1995
2
Philips Semiconductors
Preliminary specification
DC-coupled vertical deflection and
East-West output circuit
TDA8350Q
FEATURES
Few external components
Highly efficient fully DC-coupled vertical output bridge
circuit
Vertical flyback switch
Guard circuit
Protection against:
– short-circuit of the output pins
– short-circuit of the output pins to V
P
High EMC immunity due to common mode inputs
Temperature (thermal) protection
East-West output stage with one single conversion
resistor.
GENERAL DESCRIPTION
The TDA8350Q is a power circuit for use in 90
°
and 110
°
colour deflection systems for field frequencies of 50
to 120 Hz. The circuit provides a DC driven vertical
deflection output circuit, operating as a highly efficient
class G system and an East-West driver for sinking the
diode modulator current.
QUICK REFERENCE DATA
Note
1.
A flyback supply voltage of
>
50 V up to 60 V is allowed in application. A 220 nF capacitor in series with a 22
resistor
(dependent on I
O
and the inductance of the coil) has to be connected between pin 7 and ground. The decoupling
capacitor of V
FB
has to be connected between pin 8 and pin 4. This supply voltage line must have a resistance of
33
(see application circuit Fig.5).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC supply
V
P
I
P
supply voltage
quiescent current
9
30
25
V
mA
Vertical circuit
I
O(p-p)
I
diff(p-p)
output current (peak-to-peak value)
differential input current
(peak-to-peak value)
differential input voltage
(peak-to-peak value)
600
3
A
μ
A
V
diff(p-p)
1.5
1.8
V
Flyback switch
I
M
V
FB
peak output current
flyback supply voltage
±
1.5
50
60
A
V
V
note 1
East-West amplifier
I
O(sink)
V
O(sink)
I
bias
output current (sink only)
peak output voltage
input bias current
500
40
1
mA
V
μ
A
I
O(sink)
= 10
μ
A
Thermal data (in accordance with IEC 747-1)
T
stg
T
amb
T
vj
storage temperature
operating ambient temperature
virtual junction temperature
65
25
150
+75
150
°
C
°
C
°
C
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