參數資料
型號: TDA6650ATT/C3/S2
廠商: NXP SEMICONDUCTORS
元件分類: 消費家電
英文描述: SPECIALTY CONSUMER CIRCUIT, PDSO38
封裝: 4.40 MM, 0.50 MM PITCH, PLASTIC, MO-153, SOT510-1, TSSOP-38
文件頁數: 30/54頁
文件大小: 325K
代理商: TDA6650ATT/C3/S2
TDA6650ATT_6651ATT_2
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 February 2007
36 of 54
NXP Semiconductors
TDA6650ATT; TDA6651ATT
5 V mixer/oscillator and low noise PLL synthesizer
Vo =Vmeas + 3.75 dB.
V’meas =Vo (transformer ratio N1/N2 = 5 and loss).
Wanted signal source at fRFpix is 80 dBV.
Unwanted output signal at fsnd.
The level of unwanted signal is measured by causing 0.3 % AM modulation in the wanted signal.
N1 = 10 turns.
N2 = 2 turns.
N1/N2 = 5.
Fig 18. Cross modulation measurement in low and mid band with asymmetrical IF output
57 MHz
V
A
B
C
D
HYBRID
FILTER
LBIN
or
MBIN
IFOUTA
DUT
IFOUTB
VCCA
001aac095
50
wanted
signal
source
unwanted
signal
source
AM = 30 %
1 kHz
10 dB
attenuator
Vmeas
RMS
voltmeter
50
50
eu
ew
50
modulation
analyzer
27
Vo
V’meas =Vo (transformer ratio N1/N2 = 5 and loss).
Wanted signal source at fRFpix is 80 dBV.
The level of unwanted signal Vo at fsnd is measured by causing 0.3 % AM modulation in the wanted output signal.
N1 = 10 turns.
N2 = 2 turns.
N1/N2 = 5.
Fig 19. Cross modulation measurement in low and mid band with symmetrical IF output
A
B
C
D
HYBRID
IFOUTA
IFOUTB
001aac096
C
N1
N2
transformer
V
FILTER
57 MHz
50
wanted
signal
source
unwanted
signal
source
AM = 30 %
1 kHz
LBIN
or
MBIN
6 dB
attenuator
V'meas
RMS
voltmeter
DUT
50
50
eu
ew
50
modulation
analyzer
Vo
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