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參數(shù)資料
| 型號(hào)： | TDA5360 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads |
| 中文描述： | 預(yù)硬盤放大器磁共振讀/寫磁頭感應(yīng) |
| 文件頁數(shù)： | 30/34頁 |
| 文件大小： | 198K |
| 代理商： | TDA5360 |
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1998 July 30
Philips Semiconductors
Objective Specification, Revision 2.2
Pre-Amplifier for Hard Disk Drive with
MR-Read / Inductive Write Heads
TDA5360
30
12.4
Unless otherwise specified, recommended operating conditions apply
Switching Characteristics
Notes:
1.
The differential peak to peak voltage swing could be from 0.4V to 1.5V and the common mode should be such that
for any of the two states the maximum High shall be less than Vcc and the minimum LOW shall be more than 2.4V.
In current mode, a ratio of at least 5 sould exist between the HIGH and LOW level currents.
Whatever constant power is programmed, the value of the Imr current can not exceed the limits given in the constant
current mode.
The input referred noise voltage, excluding the noise of the MR resistor iis defined as follows :
2
4
–
=
2.
3.
4.
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
SI
Serial Interface timing
(Note 6)
tRW
R/WN to Write Mode
To 90% of write current
50
ns
SEN to Write Mode
To 90% of write current
50
ns
tWR
R/WN to Read Mode
Reader outputs loaded with high-
pass single ended filters :
R=165
, C=270pF
Writer output shorted
(Note 7)
175
ns
tCS
CS to Read Mode
Reader outputs loaded with high-
pass single ended filters :
R=165
, C=270pF
1
us
tHS
Head Switching
Reader outputs loaded with high-
pass single ended filters :
R=165
, C=270pF
1
us
tRI
CS to Unselect
To 10% write current
50
ns
tD1
Safe to Unsafe
50% WDP to 50% FLT
when a low frequency condition
occurs.
1
us
tD2
Unsafe to Safe
50% WDP to 50% FLT
20
ns
tD3
Head Current Propagation
Delay
From 50% of WDP to 50% of write
current, load=short
5
ns
TRSET
MR Bias Current Settling
Time
IMR = 8mA, RMR =
66
(Note 8)
1
us
vn
2
vnout
Av
--------------
k
T
RMR
×
×
×
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