參數(shù)資料
型號: TDA5360
廠商: NXP Semiconductors N.V.
英文描述: Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads
中文描述: 預(yù)硬盤放大器磁共振讀/寫磁頭感應(yīng)
文件頁數(shù): 19/34頁
文件大小: 198K
代理商: TDA5360
1998 July 30
Philips Semiconductors
Objective Specification, Revision 2.2
Pre-Amplifier for Hard Disk Drive with
MR-Read / Inductive Write Heads
TDA5360
19
8
Measurement Register M4...M0 = 5 bits for Rmr/Temperature digitazation (read back only bits)
RANGE1,RANGE0 = 2bits to define which measurement to be done
(0,0)
RMR measurement for
Rmr = 698 / (15.5 + M0 + 2*M1 + 4*M2 + 8*M3 + 16*M4)
15
< Rmr < 46
(0,1) and (1,0) :
RMR measurement for
Rmr = 2094 / ( 21 + M0 + 2*M1 + 4*M2 + 8*M3 + 16*M4 )
40
< Rmr < 90
(1,1) = Temperature measurement
Temp = 473K - 4.6K * (M0 + 2*M1 + 4*M2 + 8*M3 + 16*M4)
DIGON = is set HIGH to launch a digitazation
( Note 8 )
9
Operating mode
Register
SIOLVL = level of SDATA when reading back a register
if LOW,
3.3V compatible.
if HIGH,
5.0V compatible.
RSTDMY = define functionality of DRN pin
( Note 9a)
MODE1,MODE0 = 2 power management control bits.
(0,0)
Sleep Mode
(0,1)
Standby Mode
(1,0)
Active Mode or STW one head
(1,1)
Test Mode or STW two heads
(Note 9b)
11
Thermal Asperity
Compression
ENFST = when TAC is enable, this bit defines BFAST functionality
( Note 11a)
TAU = Low Pole Frequency time constant of the TAC
LOW
=
700 ns
HIGH
=
70 ns
TACT2,TACT1,TACT0 = 3 bits to determine the TAC threshold
(0,0,0) =
4.00 mV
(0,0,1) =
2.97 mV
(0,1,0) =
2.21 mV
(0,1,1) =
1.64 mV
(1,0,0) =
1.22 mV
(1,0,1) =
0.91 mV
(1,1,0) =
0.67 mV
(1,1,1) =
0.50 mV
( Note 11b )
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