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參數(shù)資料
| 型號： | TDA5155 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Pre-amplifier for Hard Disk Drive HDD with MR-read/inductive write heads |
| 中文描述： | 預硬盤驅(qū)動器硬盤驅(qū)動器放大器MR-read/inductive寫磁頭 |
| 文件頁數(shù)： | 20/24頁 |
| 文件大?。?/td> | 112K |
| 代理商： | TDA5155 |
1997 Apr 08
20
Philips Semiconductors
Preliminary specification
Pre-amplifier for Hard Disk Drive (HDD)
with MR-read/inductive write heads
TDA5155
Switching characteristics
f
SCLK
V
o(cm)
serial interface clock rate
common mode DC output
voltage change from read to
write mode
write-to-read recovery time
(AC and DC settling);
note 9
200
25
MHz
mV
I
MR
= 10 mA; I
WR
= 35 mA
t
rec(W-R)
from 50% of the rising edge of
R/W to steady state read-back
signal: AC and DC settling at
90% (without load at RDx, RDy)
read amplifier OFF: d5 = 0
read amplifier ON: d5 = 1
from falling edge of SEN to
steady state read-back signal
(without load at RDx, RDy)
3
100
3
4.5
150
4.5
μ
s
ns
μ
s
t
sw(R)
head switching (in read
mode), standby to read
active and MR current
change recovery time.
(AC and DC settling);
note 10
read amplifier off time
t
off(R)
from falling edge of R/W to read
head inactive
from 50% of the falling edge of
R/W to 90% of the steady state
write current (in write mode)
from rising edge of R/W to
1
10
×
I
WR
(programmed)
(I
WR
= 35 mA)
from falling edge of SEN to write
head active
50
ns
t
st(W)
write settling times; note 11
70
ns
t
off(W)
write amplifier off time
50
ns
t
sw(W)
head switching (in write
mode), and standby to write
head active
switch time to and from
sleep mode
50
70
ns
t
sw(S)
100
μ
s
DC characteristics
I
CC(R)
I
CC(W)
read mode supply current
write mode supply current
I
MR
= 10 mA; note 12
I
WR
= 35 mA; note 13
from V
CC
(5 V)
from V
CC(WD)
(5 to 8 V)
72
80
mA
33
54
0.25
41
61
1
mA
mA
mA
I
DD(STB)
standby mode supply
current
sleep mode supply current
reference voltage for R
ext
I
DD(S)
V
ref
static
0.02
1.32
mA
V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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