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2
SMBus Thermal Sensor with External Diode Input
TCM1617
TCM1617-1 2/5/99
2001 Microchip Technology Inc. DS21485A
ABSOLUTE MAXIMUM RATINGS*
Power Supply Voltage (V
DD
) .........................................6V
Voltage On Any Pin............ (GND – 0.3V) to (V
DD
+ 0.3V)
Operating Temperature (T
A
) ..................–55
°
C to +125
°
C
Storage Temperature (T
STG
)..................–65
°
C to +150
°
C
SMBus Input/Output Current................. –1 mA to +50 mA
D– Input Current......................................................
±
1 mA
Max. Power Dissipation........................................330 mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
ELECTRICAL CHARACTERISTICS:
V
DD
= 3.3V, –55
°
C
≤
T
A
≤
125
°
C, unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Power Supply
V
DD
V
UV-LOCK
Power Supply Voltage
V
DD
Undervoltage
Lockout Threshold
Power-On Reset Threshold
Operating Current
–55
≤
T
A
≤
+125
°
C
3.0
2.4
—
2.80
5.5
2.95
V
V
V
POR
I
DD
V
DD
Falling Edge
0.25 Conv./Sec Rate
SMBus Inactive (Note 1)
2 Conv./Sec Rate
SMBus Inactive (Note 1)
V
DD
= 3.3V SMBus Active
V
DD
= 3.3V, SMBus Inactive
Power-Up Only
1.0
—
1.7
—
2.3
70
V
μ
A
I
DD
Operating Current
—
—
180
μ
A
I
DD-STANDBY
Standby Supply Current
I
DD-STANDBY
Standby Supply Current
I
ADD-BIAS
ADD[1:0] Bias Current
ALERT# Output
V
OL
Output Low Voltage
ADD[1:0] Inputs
V
IL
Logic Input Low
V
IH
Logic Input High
STBY# Input
V
IL
Logic Input Low
V
IH
Logic Input High
Temp-to-Bits Converter
T
RES
Basic Temperature Resolution
T
IERR1
Internal Diode Temperature
—
—
—
—
—
160
100
10
—
μ
A
μ
A
μ
A
I
OL
= 1.0 mA (Note 3)
—
—
0.4
V
—
—
—
V
DD
x 0.3
—
V
V
V
DD
x 0.7
—
—
—
V
DD
x 0.3
—
V
V
V
DD
x 0.7
—
–2
–3
—
–3
–5
1
—
—
±
3
—
—
±
5
100
—
+2
+3
—
+3
+5
—
—
°
C
°
C
°
C
+60
°
C
≤
T
A
≤
+100
°
C
0
°
C
≤
T
A
≤
+125
°
C
–55
°
C
≤
T
A
< 0
°
C
+60
°
C
≤
T
A
≤
+100
°
C
0
°
C
≤
T
A
≤
+125
°
C –3
–55
°
C
≤
T
A
< 0
°
C
(D+) – (D–) ~ 0.65V
T
EERR
External Diode Temperature
(Note 4)
°
C
°
C
°
C
μ
A
I
DIODE-HIGH
External Diode
High Source Current
External Diode
Low Source Current
D– Source Voltage
—
I
DIODE-LOW
(D+) – (D–) ~ 0.65V
—
10
—
μ
A
V
D-SOURCE
—
0.7
—
V