參數(shù)資料
型號(hào)： TCM1030P
廠商： Power Innovations International, Inc.
英文描述： DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
中文描述： 雙遠(yuǎn)期導(dǎo)電的P -可編程門(mén)晶閘管過(guò)壓保護(hù)
文件頁(yè)數(shù)： 2/14頁(yè)
文件大?。?/td> 286K
代理商： TCM1030P
TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
SEPTEMBER 1995 - REVISED SEPTEMBER 1997
2
P R O D U C T I N F O R M A T I O N
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high
reliability and in normal system operation they are virtually transparent. The buffered gate design reduces the
loading on the SLIC supply during overvoltages caused by power cross and induction.
NOTES: 1. Initially the protector must be in thermal equilibrium with -40°C
≤
T
J
≤
85°C. The surge may be repeated after the device returns to
its initial conditions.
2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both
terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the
rated current value of an individual terminal pair). Above 85°C, derate linearly to zero at 150°C lead temperature.
absolute maximum ratings
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage, I
G
= 0, -40°C
≤
T
J
≤
85°C
Repetitive peak gate-cathode voltage, V
KA
= 0, -40°C
≤
T
J
≤
85°C
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
V
DRM
V
GKRM
-100
V
-85
V
I
TSP
A
10/1000 μs
30
10/160 μs
45
2/10 μs
50
Non-repetitive peak on-state current (see Notes 1 and 2)
I
TSM
Arms
60 Hz sine-wave, 25 ms
6
60 Hz sine-wave, 2 s
1
Continuous on-state current (see Note 2)
I
TM
I
FM
T
A
T
stg
T
L
0.3
A
Continuous forward current (see Note 2)
0.3
A
Operating free-air temperature range
-40 to +85
°C
Storage temperature range
-40 to +150
°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 s
260
°C
recommended operating conditions
MIN
TYP
MAX
UNIT
C
G
Gate decoupling capacitor
100
nF
electrical characteristics, -40°C
≤
T
J
≤
85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
D
Off-state current
V
D
= -85 V, V
GK
= 0 V
T
J
= 25°C
T
J
= 85°C
5
μA
50
μA
V
(BO)
Breakover voltage
dv/dt = -250 V/ms, Source Resistance = 300
, V
GG
= -50 V
dv/dt = -250 V/ms, Source Resistance = 300
, V
GG
= -65 V
I
T
= 12.5 A, 10/1000 μs, Source Resistance = 80
, V
GG
= -50 V
dv/dt = -250 V/ms, Source Resistance = 300
, V
GG
= -50 V
I
T
= 1 A
I
T
= 10 A
I
T
= 16 A
I
T
= 30 A
I
F
= 1 A
I
F
= 10 A
I
F
= 16 A
I
F
= 30 A
I
T
= -1 A, di/dt = +1A/ms, V
GG
= -50 V
-53
-68
-55
V
I
S
Switching current
-100
mA
V
T
On-state voltage
3
4
5
7
V
V
F
Forward voltage
2
4
5
5
V
I
H
Holding current
-150
mA
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