參數(shù)資料
型號: TCM1030DR
廠商: Power Innovations International, Inc.
英文描述: DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
中文描述: 雙遠(yuǎn)期導(dǎo)電的P -可編程門晶閘管過壓保護(hù)
文件頁數(shù): 3/14頁
文件大?。?/td> 286K
代理商: TCM1030DR
3
SEPTEMBER 1995 - REVISED SEPTEMBER 1997
TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
P R O D U C T I N F O R M A T I O N
I
GAS
Gate reverse current
V
GG
= -85 V, K and A terminals connected
T
J
= 25°C
T
J
= 85°C
5
μA
50
μA
I
GT
Gate trigger current
I
T
= -1 A, t
p(g)
20 μs, V
GG
= -50 V
15
mA
dv/dt
Critical rate of rise of
off-state voltage
V
GG
= -50 V, (see Note 3)
-1000
V/μs
C
O
Anode-cathode off-
state capacitance
f = 1 MHz, V
d
= 0.1 V, I
G
= 0, (see Note 4)
V
D
= 0 V
V
D
= -50 V
85
pF
10
pF
NOTES: 3. Linear rate of rise, maximum voltage limited to 80% V
GG
.
4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
thermal characteristics
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
R
θ
JA
Junction to free air thermal resistance
P
tot
= 0.8 W, T
A
= 25°C
5 cm
2
, FR4 PCB
D Package
170
°C/W
P Package
125
PARAMETER MEASUREMENT INFORMATION
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC
electrical characteristics, -40°C
T
J
85°C (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
-v
I
S
V
S
V
GG
V
D
I
H
I
T
V
T
I
TSM
I
TSP
V
(BO)
I
(BO)
I
D
Quadrant I
Forward
Conduction
Characteristic
+v
+i
I
F
V
F
I
FSM
(= |I
TSM
|)
I
FSP
(= |I
TSP
|)
-i
Quadrant III
Switching
Characteristic
PM6XAAA
V
GK(BO)
相關(guān)PDF資料
PDF描述
TCM1030P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
TCM1060D DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
TCM1060DR DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
TCM1060P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
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