參數(shù)資料
型號(hào)： TCM1030DR
廠(chǎng)商： Power Innovations International, Inc.
英文描述： DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
中文描述： 雙遠(yuǎn)期導(dǎo)電的P -可編程門(mén)晶閘管過(guò)壓保護(hù)
文件頁(yè)數(shù)： 2/14頁(yè)
文件大?。?/td> 286K
代理商： TCM1030DR
TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
SEPTEMBER 1995 - REVISED SEPTEMBER 1997
2
P R O D U C T I N F O R M A T I O N
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high
reliability and in normal system operation they are virtually transparent. The buffered gate design reduces the
loading on the SLIC supply during overvoltages caused by power cross and induction.
NOTES: 1. Initially the protector must be in thermal equilibrium with -40°C
≤
T
J
≤
85°C. The surge may be repeated after the device returns to
its initial conditions.
2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both
terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the
rated current value of an individual terminal pair). Above 85°C, derate linearly to zero at 150°C lead temperature.
absolute maximum ratings
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage, I
G
= 0, -40°C
≤
T
J
≤
85°C
Repetitive peak gate-cathode voltage, V
KA
= 0, -40°C
≤
T
J
≤
85°C
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
V
DRM
V
GKRM
-100
V
-85
V
I
TSP
A
10/1000 μs
30
10/160 μs
45
2/10 μs
50
Non-repetitive peak on-state current (see Notes 1 and 2)
I
TSM
Arms
60 Hz sine-wave, 25 ms
6
60 Hz sine-wave, 2 s
1
Continuous on-state current (see Note 2)
I
TM
I
FM
T
A
T
stg
T
L
0.3
A
Continuous forward current (see Note 2)
0.3
A
Operating free-air temperature range
-40 to +85
°C
Storage temperature range
-40 to +150
°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 s
260
°C
recommended operating conditions
MIN
TYP
MAX
UNIT
C
G
Gate decoupling capacitor
100
nF
electrical characteristics, -40°C
≤
T
J
≤
85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
D
Off-state current
V
D
= -85 V, V
GK
= 0 V
T
J
= 25°C
T
J
= 85°C
5
μA
50
μA
V
(BO)
Breakover voltage
dv/dt = -250 V/ms, Source Resistance = 300
, V
GG
= -50 V
dv/dt = -250 V/ms, Source Resistance = 300
, V
GG
= -65 V
I
T
= 12.5 A, 10/1000 μs, Source Resistance = 80
, V
GG
= -50 V
dv/dt = -250 V/ms, Source Resistance = 300
, V
GG
= -50 V
I
T
= 1 A
I
T
= 10 A
I
T
= 16 A
I
T
= 30 A
I
F
= 1 A
I
F
= 10 A
I
F
= 16 A
I
F
= 30 A
I
T
= -1 A, di/dt = +1A/ms, V
GG
= -50 V
-53
-68
-55
V
I
S
Switching current
-100
mA
V
T
On-state voltage
3
4
5
7
V
V
F
Forward voltage
2
4
5
5
V
I
H
Holding current
-150
mA
相關(guān)PDF資料
PDF描述
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TCM1060DR DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TCM1030P 制造商:Rochester Electronics LLC 功能描述:- Bulk
TCM1050 制造商:TI 制造商全稱(chēng):Texas Instruments 功能描述:DUAL TRANSIENT-VOLTAGE SUPPRESSORS
TCM1050D 功能描述:TVS二極管陣列 Dual RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類(lèi)型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C
TCM1050DR 功能描述:TVS二極管陣列 Dual Transient Vltg Suppressor RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類(lèi)型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C
TCM1050P 制造商:TI 制造商全稱(chēng):Texas Instruments 功能描述:DUAL TRANSIENT-VOLTAGE SUPPRESSORS
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