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參數(shù)資料
| 型號： | TCFGB1C106M8R |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Chip tantalum capacitors with open-function built-in |
| 中文描述： | 以開放式功能的內(nèi)置芯片鉭電容器中 |
| 文件頁數(shù)： | 14/16頁 |
| 文件大?。?/td> | 139K |
| 代理商： | TCFGB1C106M8R |
TCFG series
Tantalum capacitors
14/15
ESR
(100kHz)
33
μ
F
33
μ
F
100
μ
F
4.7
μ
F
4.7
μ
F
100
10
I
1
0.10.1
1
10
100
47
μ
F
22
μ
F
Beware of inrush current.
Inrush currents are inversely proportional to ESR. Large inrush currents can cause component failure.
Inrush current
Tantalum capacitor
Aluminum electrolyte
Fig.16 Maximum inrush current and ESR
Vpp = 10V limit = 20A
Pulse Width = 500
μ
sec.
Power OP Amp Slew Rate = 10V / 6
μ
s
15
μ
F
V (V)
100
10
I
1
R
C
I = 0.47V
0.10.1
1
10
100
I =
SAMPLE 16V-3.3
μ
F NEC
Pulse width = 500
μ
sec
Slew rate = 10V-6
μ
c
Current limit = 20A
0.25
0.5
1.0
2.0
5.0
0.476
V
Inrush current can be limited by means of a protective resistor.
Fig.17 Imax change due to protective resistor R
R = 0
(11) Ultrasonic cleaning
Carry out cleaning under the mildest conditions possible. The internal element of a tantalum capacitor are larger than
those of a transistor or diode, so it is not as resistant to ultrasonic waves.
Example : water
Propagation speed 1500m / s
Solvent density 1g / cm
3
Frequency Wavelength
20kHz
28kHz
50kHz
7.5cm
5.3cm
3.0cm
Frequency and wavelength
Precautions
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| TCFGB1C107K8R | 制造商:ROHM 制造商全稱:Rohm 功能描述:Chip tantalum capacitors (Fail-safe open structure type) |
| TCFGB1C107M8R | 制造商:ROHM 制造商全稱:Rohm 功能描述:Chip tantalum capacitors (Fail-safe open structure type) |
| TCFGB1C156K | 制造商:ROHM 制造商全稱:Rohm 功能描述:Chip tantalum capacitors with open-function built-in |
| TCFGB1C156K8R | 制造商:ROHM 制造商全稱:Rohm 功能描述:Chip tantalum capacitors (Fail-safe open structure type) |
| TCFGB1C156M | 制造商:ROHM 制造商全稱:Rohm 功能描述:Chip tantalum capacitors with open-function built-in |
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