參數(shù)資料
型號: TCFGB1C106M8R
廠商: Rohm CO.,LTD.
英文描述: Chip tantalum capacitors with open-function built-in
中文描述: 以開放式功能的內(nèi)置芯片鉭電容器中
文件頁數(shù): 11/16頁
文件大?。?/td> 139K
代理商: TCFGB1C106M8R
TCFG series
Tantalum capacitors
(3) Derating voltage as function of temperature
85
°
C
11/15
50
60
70
80
90
100
75
85
95
105
115
125
TEMPERATURE
(
°
C)
Fig.5
P
°
C
R
)
125
°
C
Rated Voltage
4
6.3
10
16
20
5.2
8
13
20
26
2.5
4
6.3
10
13
3.4
5
9
12
16
Surge Voltage
Category Voltage
Surge Voltage
(V.DC)
(V.DC)
(V.DC)
(V.DC)
(4) Reliability
The malfunction rate of tantalum solid state electrolytic capacitors varies considerably depending on the conditions of
usage (ambient temperature, applied voltage, circuit resistance).
Formula for calculating malfunction rate
λ
p =
λ
b
×
(
π
E
×
π
SR
×
π
Q
×
π
CV
)
λ
p
: Malfunction rate stemming from operation
λ
b
: Basic malfunction rate
π
E
: Environmental factors
π
SR
: Series resistance
π
Q
: Level of malfunction rate
π
CV
: Capacitance
For details on how to calculate the malfunction rate stemming from operation, see the tantalum solid state electrolytic
capacitors column in MIL-HDBK-217.
Malfunction rate as function of operating Malfunction rate as function of circuit resistance (
/V)
temperature and rated voltage
1.0
Ratio = Applied Voltage
1.0
F
0.01
0.02
0.03
0.06
0.1
0.2
0.3
0.5
0.7
0.5
0.3
0.1
20
40
60
85
OPERATING TEMPERATURE
(
°
C)
Fig.6
0.4
0.6
0.8
1.0
2.0
4.0
6.0
0.1
0.2
0.6
0.4
3.0
1.0
2.0
RESISTANCE OF CIRCUIT
(
/ V)
Fig.7
R
π
)
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