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參數(shù)資料
| 型號(hào)： | TC74AC166P_07 |
| 廠商： | Toshiba Corporation |
| 英文描述： | CMOS Digital Integrated Circuit Silicon Monolithic 8-Bit Shift Register (P-IN, S-OUT) |
| 中文描述： | CMOS數(shù)字集成電路硅單片8位移位寄存器（個(gè)P -，第S -輸出） |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 510K |
| 代理商： | TC74AC166P_07 |
TC74AC166P/F/FN
2007-10-01
4
System Diagram
Absolute Maximum Ratings (Note 1)
Characteristics
Symbol
Rating
Unit
Supply voltage range
V
CC
0.5 to 7.0
V
DC input voltage
V
IN
0.5 to V
CC
+
0.5
V
DC output voltage
V
OUT
0.5 to V
CC
+
0.5
V
Input diode current
I
IK
±
20
mA
Output diode current
I
OK
±
50
mA
DC output current
I
OUT
±
50
mA
DC V
CC
/ground current
I
CC
±
100
mA
Power dissipation
P
D
500 (DIP) (Note 2)/180 (SOP)
mW
Storage temperature
T
stg
65 to 150
°C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta
=
40 to 65°C. From Ta
=
65 to 85°C a derating factor of
10 mW/°C should be
applied up to 300 mW.
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