參數(shù)資料
型號(hào)： TC58DVM72A1FT00
廠商： Toshiba Corporation
英文描述： 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
中文描述： 128兆位（16米x 8 BITS/8M x 16位）的CMOS NAND型E2PROM的
文件頁(yè)數(shù)： 33/34頁(yè)
文件大?。?/td> 369K
代理商： TC58DVM72A1FT00
TC58DVM72A1FT00/ TC58DVM72F1FT00
TC58DAM72A1FT00/ TC58DAM72F1FT00
2003-01-24 33/34
(14)
Failure phenomena for Program and Erase operations
The device may fail during a Program or Erase operation.
The following possible failure modes should be considered when implementing a highly reliable system.
FAILURE MODE
DETECTION AND COUNTERMEASURE SEQUENCE
Block
Erase Failure
Status Read after Erase
o
Block Replacement
Page
Programming
Failure
Status Read after Program
o
Block Replacement
(1) Block Verify after Program
o
Retry
Single Bit
Programming
Failure
1
o
0
(2) ECC
x
ECC: Error Correction Code
x
Block Replacement
Program
Erase
When an error occurs in an Erase operation, prevent future accesses to this bad block
(again by creating a table within the system or by using another appropriate scheme).
(15) Do not turn off the power before write/erase operation is complete. Avoid using the device when the battery is
low. Power shoetage and/or power failure before write/erase operation is complete will cause loss of data and/or
damage to data.
When an error happens in Block A, try to
reprogram the data into another Block (Block B)
by loading from an external buffer. Then,
prevent further system accesses to Block A (by
creating a bad block table or by using an
another appropriate scheme).
Block A
Block B
Error occurs
Buffer
memory
Figure 28.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TC58DVM72A1FT00BBH 制造商:Toshiba America Electronic Components 功能描述:
TC58DVM72A1FT10BBH 制造商:Toshiba America Electronic Components 功能描述:
TC58DVM72A1FTI 制造商:Toshiba America Electronic Components 功能描述:128 Mb (16M x 8) Nand, Flash Memory
TC58DVM72A1FTI (YBEL) 制造商:Toshiba America Electronic Components 功能描述:
TC58DVM72A1FTI0BBH 制造商:Toshiba America Electronic Components 功能描述:
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