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參數(shù)資料
| 型號： | TC55VCM216ASTN40 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| 中文描述： | 馬鞍山暫定東芝數(shù)字集成電路硅柵CMOS |
| 文件頁數(shù)： | 14/14頁 |
| 文件大?。?/td> | 201K |
| 代理商： | TC55VCM216ASTN40 |
TC55VCM216ASTN40,55
2002-07-04 14/14
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the
“
Handling Guide for Semiconductor Devices,
”
or
“
TOSHIBA Semiconductor Reliability
Handbook
”
etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (
“
Unintended Usage
”
). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer
’
s own risk.
The products described in this document are subject to the foreign exchange and foreign trade laws.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EBA
RESTRICTIONS ON PRODUCT USE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TC55VCM216ASTN55 | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55VD1618FF-133 | 1M Word x 18 Bit Synchronous No-turnround Static RAM(1M 字x18位同步無轉(zhuǎn)向靜態(tài) RAM) |
| TC55VD1636FF-133 | 512K Word x 36 Bit Synchronous No-turnround Static RAM(512K 字x36位同步無轉(zhuǎn)向靜態(tài) RAM) |
| TC55VD818FF-133 | 512K Word x 18 Bit Synchronous No-turnround Static RAM(512K 字x18位同步無轉(zhuǎn)向靜態(tài) RAM) |
| TC55VD818FF-150 | 512K Word x 18 Bit Synchronous No-turnround Static RAM(512K 字x18位同步無轉(zhuǎn)向靜態(tài) RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TC55VCM216ASTN55 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55VCM216ASTN55(LA) | 制造商:Toshiba America Electronic Components 功能描述: |
| TC55VCM316BSGN55LC | 制造商:Toshiba America Electronic Components 功能描述: |
| TC55VCM316BTGN55LA | 功能描述:IC SRAM 8MBIT 55NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
| TC55VCM416BSGN | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM |
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