參數(shù)資料
型號(hào)： TC3827-4.1VUA
廠商： Microchip Technology Inc.
英文描述： Lithium-Ion Battery Charger
中文描述： 鋰離子電池充電器
文件頁(yè)數(shù)： 2/10頁(yè)
文件大?。?/td> 143K
代理商： TC3827-4.1VUA
2
Lithium-Ion Battery Charger
TC3827
TC3827-2 12/12/00
2001 Microchip Technology Inc. DS21558A
ABSOLUTE MAXIMUM RATINGS*
Input Voltage (V
IN
), V
OUT
, V
SNS
, MODE, and I
MON
...........
.............................................................. –0.3V to 6.0V
SHDN ...............................................–0.3V to (V
IN
+ 0.3V)
8-Pin MSOP (derate 4.1mW/
°
C above +70
°
C) .....330mW
Operating Ambient Temperature Range ..–20
°
C to +85
°
C
Storage Temperature Range .................–65
°
C to +150
°
C
Lead Temperature (Soldering, 10 sec) .................+300
°
C
Vapor Phase (60 sec) ...........................................+210
°
C
Infrared (15 sec)....................................................+220
°
C
I
IMON
(source) ......................................................0.375mA
ELECTRICAL CHARACTERISTICS:
V
IN
= [V
REG
+ 1V] , T
A
= -20
°
C to +85
°
C, unless otherwise noted. Typical values
at T
A
= +25
°
C, R
SENSE
= 500m
, Test Circuit Figure 3.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
I
VIN
Power Supply Current
Shutdown Mode, V
SHDN
= 0V
Constant Voltage Mode
—
—
4.5
1
15
560
5.5
μ
A
350
—
V
IN
Voltage Regulation
(Constant Voltage Mode)
V
REG
Battery Regulation Volts
Power Supply Voltage In
V
3827- 4.2VUA
3827- 4.1VUA
V
IN
= V
REG
+ 1V to 5.5V,
V
IN
= 4.5V to 5.5V, I
OUT
= 75mA
I
OUT
=10mA to 75mA
V
IN
= Floating, V
OUT
= V
REG
—
—
–1
–10
–1
—
4.2
4.1
—
—
±
0.2
1
—
—
+1
+10
+1
5
V
V
OUT
LI
REG
LD
REG
ID
ISCH
MOSFET Gate Drive
I
DRV
Output Voltage Accuracy
Line Regulation
Load Regulation
Output Reverse Leakage
%
mV
mV
μ
A
Gate Drive Current
Sink, Constant Voltage Mode (Note 1)
Source, Constant Voltage Mode (Note 1)
—
0.08
—
—
—
1.0
1
—
—
mA
V
DRV
Current Sense Amp
V
GAIN
V
CS
I
SC
K
MODE
V
TH
V
OL
I
LK
Gate Drive Min Voltage
V
GAIN (
V
GS
/
V
OUT
)
Current Limit Threshold
Short Circuit Current
KFactor
—
40
—
—
100
53
46
0.46
—
75
—
—
dB
mV
mA
A/A
(V
IN
– V
SNS
) @ I
MAX
Mode Threshold
Mode Low Voltage
Mode Leakage Current
—
—
—
V
REG
—
—
—
400
+1
V
I
SINK
= 10mA, V
OUT
= 3.5V
V
MODE
= 5.5V, I
O
= 0mA,
MODE = Constant Voltage
mV
μ
A
SHDN
V
IH
V
IL
I
LK
I
MON
V
IMON
(V
IN
- V
SNS
)
Notes: 1. Where V
OUT
= 1% from Nominal, continuous current.
SHDN High Threshold
SHDN Low Threshold
SHDN Leakage Current
40
–
—
—
—
—
—
25
+1
%V
DD
%V
DD
μ
A
V
SHDN
= 0V to 5V
Current Sense Gain
V
O
= 0V to 3.5V,R
L
> 20k
—
26
—
V/V
I
MODE
(sink) ..............................................................20mA
I
DRV
............................................................................1mA
ESD Rating .................................................................2kV
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
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