參數(shù)資料
型號(hào)： TC2320
廠商： Supertex, Inc.
英文描述： N- and P- Channel Enhancement-Mode Dual MOSFET
中文描述： N和P溝道增強(qiáng)型雙MOSFET
文件頁(yè)數(shù)： 3/3頁(yè)
文件大?。?/td> 434K
代理商： TC2320
3
TC2320
Switching Waveforms and Test Circuit
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Drain-to-Source Breakdown Voltage
-200
V
V
GS
= 0V, I
D
= -2mA
V
GS
= V
DS
, I
D
= -1mA
V
GS
= V
DS
, I
D
= -1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= -4.5V, V
DS
= -25V
V
GS
= -10V, V
DS
= -25V
V
GS
= -4.5V, I
D
= -100mA
V
GS
= -10V, I
D
= -200mA
V
GS
= -10V, I
D
= -200mA
V
DS
= -25V, I
D
= -200mA
Gate Threshold Voltage
-1.0
-2.4
V
Change in V
GS(th)
with Temperature
Gate Body Leakage
4.5
mV/
°
C
-100
nA
Zero Gate Voltage Drain Current
-10
μ
A
-1.0
mA
I
D(ON)
ON-State Drain Current
-0.25
-0.7
-0.75
-2.1
R
DS(ON)
10
15
8.0
12
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
1.7
%/
°
C
100
250
m
Input Capacitance
75
125
Common Source Output Capacitance
20
85
pF
Reverse Transfer Capacitance
10
35
Turn-ON Delay Time
10
Rise Time
15
Turn-OFF Delay Time
20
Fall Time
15
Diode Forward Voltage Drop
-1.8
V
V
GS
= 0V, I
SD
= -0.5A
V
GS
= 0V, I
SD
= -0.5A
Reverse Recovery Time
300
ns
Notes:
1.All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
P-Channel Electrical Characteristics
(@ 25
°
C unless otherwise specified)
A
Static Drain-to-Source
ON-State Resistance
V
GS
= 0V, V
DS
= -25V
f = 1 MHz
ns
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
03/23/02
2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
相關(guān)PDF資料
PDF描述
TC2320TG N- and P- Channel Enhancement-Mode Dual MOSFET
TC312 CONNECTOR ACCESSORY
TC3299CE CONNECTOR ACCESSORY
TC35096P C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
TC3827 Lithium-Ion Battery Charger
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TC2320_07 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N- and P-Channel Enhancement-Mode Dual MOSFET
TC2320TG 功能描述:MOSFET 200V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TC2320TG-G 功能描述:MOSFET N/P Ch 200 Volt RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TC232COE 制造商:TELCOM 制造商全稱:TelCom Semiconductor, Inc 功能描述:DUAL RS-232 TRANSMITTER/RECEIVER AND POWER SUPPLY
TC232CPE 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:DUAL RS-232 TRANSMITTER/RECEIVER AND POWER SUPPLY
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*