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參數(shù)資料
| 型號(hào)： | TC2320TG |
| 廠商： | SUPERTEX INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N- and P- Channel Enhancement-Mode Dual MOSFET |
| 中文描述： | 200 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 434K |
| 代理商： | TC2320TG |
TC2320
04/23/02
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
TC2320
N- and P- Channel Enhancement-Mode Dual MOSFET
Features
Low threshold
Low on resistance
Independent, electrically isolated N- and P-channels
Low input capacitance
Fast switching speeds
Free from secondary breakdowns
Low input and output leakage
Application
Medical Ultrasound Transmitters
High voltage pulsers
Amplifiers
Buffers
Piezoelectric transducer drivers
General purpose line drivers
Logic level interfaces
Low Threshold DMOS Technology
The Supertex TC2320TG consist of a high voltage low threshold N-
channel and P-channel MOSFET in an SO-8 package. These low
threshold enhancement-mode (normally-off) transistors utilize an
advanced vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Absolute Maximum Ratings*
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
±
20V
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
300
°
C
*Distance of 1.6mm from case for 10 seconds.
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Package Option
S1
G1
S2
G2
D2
D2
D1
D1
SO-8 Package
(top view)
N-Channel
P-Channel
1
2
3
4
6
5
7
8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TC2320TG-G | 功能描述:MOSFET N/P Ch 200 Volt RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TC232COE | 制造商:TELCOM 制造商全稱:TelCom Semiconductor, Inc 功能描述:DUAL RS-232 TRANSMITTER/RECEIVER AND POWER SUPPLY |
| TC232CPE | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:DUAL RS-232 TRANSMITTER/RECEIVER AND POWER SUPPLY |
| TC232EOE | 制造商:TELCOM 制造商全稱:TelCom Semiconductor, Inc 功能描述:DUAL RS-232 TRANSMITTER/RECEIVER AND POWER SUPPLY |
| TC232EPE | 制造商:TELCOM 制造商全稱:TelCom Semiconductor, Inc 功能描述:DUAL RS-232 TRANSMITTER/RECEIVER AND POWER SUPPLY |
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