參數(shù)資料
型號(hào): TC2185
廠商: Microchip Technology Inc.
英文描述: 50 mA, 100 mA, 150 mA CMOS LDOs with Shutdown and Reference Bypass
中文描述: 50毫安,100毫安,一百五十零毫安的CMOS低壓降穩(wěn)壓器具有關(guān)斷和參考旁路
文件頁(yè)數(shù): 7/18頁(yè)
文件大?。?/td> 362K
代理商: TC2185
2003 Microchip Technology Inc.
DS21662C-page 7
TC2014/2015/2185
Note:
Unless otherwise indicated, V
IN
= V
R
+ 1V, I
L
= 100 μA, C
OUT
= 3.3 μF, SHDN > V
IH
, T
A
= +25°C.
FIGURE 2-19:
(C
OUT
= 1 μF).
Line Transient Response.
FIGURE 2-20:
Dropout. (C
OUT
= 10 μF).
Load Transient Response in
FIGURE 2-21:
Shutdown Delay Time.
FIGURE 2-22:
Wake-Up Response.
FIGURE 2-23:
(C
OUT
= 1 μF Ceramic).
PSRR vs. Frequency
FIGURE 2-24:
(C
OUT
= 10 μF Ceramic).
PSRR vs. Frequency
100mA
150mA
V
OUT
100mV/DIV
V
IN
= 3.105V
V
OUT
= 3.006V
C
IN
= 1
F Ceramic
C
OUT
= 10
F Ceramic
R
LOAD
= 20
-70
-60
-50
-40
-30
-20
-10
0
10
100
11k
110k
1100k
0
Frequency (Hz)
P
(
V
IN
= 4.0V
V
INAC
= 100 mV
V
OUTDC
= 3.0V
C
OUT
= 1μF Ceramic
C
BYPASS
= 0.01 μF Ceramic
I
OUT
= 50 mA
I
OUT
= 150 mA
I
OUT
= 100 mA
1M
-70
-60
-50
-40
-30
-20
-10
0
10
10
100
1k
10k
1100k
0
Frequency (Hz)
P
(
V
IN
= 4.0V
V
INAC
= 100 mV
V
OUTDC
= 3.0V
C
OUT
= 10 μF Ceramic
C
BYPASS
= 0.01 μF Ceramic
I
OUT
= 150 mA
I
OUT
= 100 mA
1M
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