參數(shù)資料
型號: TC2185
廠商: Microchip Technology Inc.
英文描述: 50 mA, 100 mA, 150 mA CMOS LDOs with Shutdown and Reference Bypass
中文描述: 50毫安,100毫安,一百五十零毫安的CMOS低壓降穩(wěn)壓器具有關斷和參考旁路
文件頁數(shù): 6/18頁
文件大?。?/td> 362K
代理商: TC2185
TC2014/2015/2185
DS21662C-page 6
2003 Microchip Technology Inc.
Note:
Unless otherwise indicated, V
IN
= V
R
+ 1V, I
L
= 100 μA, C
OUT
= 3.3 μF, SHDN > V
IH
, T
A
= +25°C.
FIGURE 2-13:
Temperature.
Supply Current vs. Junction
FIGURE 2-14:
Temperature (150 mA).
Output Voltage vs. Junction
FIGURE 2-15:
Junction Temperature.
Load Regulation vs.
FIGURE 2-16:
Junction Temperature.
Dropout Voltage vs.
FIGURE 2-17:
(C
OUT
= 1 μF).
Load Transient Response.
FIGURE 2-18:
(C
OUT
= 10 μF).
Load Transient Response.
45
48
51
54
57
60
-
-
-
5
2
3
5
6
8
9
1
1
Junction Temperature (°C)
I
D
V
R
= 5.0V
C
OUT
= 3.3 μF
V
IN
= 6.0V
4.93
4.94
4.95
4.96
4.97
4.98
4.99
5.00
5.01
-
-
-
5
2
3
5
6
8
9
1
1
Junction Temperature (°C)
O
I
L
= 100 mA
V
R
= 5.0V
C
OUT
= 3.3 μF
V
IN
= 6.0V
I
L
= 150 mA
I
L
= 0.1 mA
-0.40
-0.30
-0.20
-0.10
0.00
0.10
0.20
0.30
0.40
-
-
-
5
2
3
5
6
8
9
1
1
Junction Temperature (°C)
L
V
R
= 5.0V
C
OUT
= 3.3 μF
V
IN
= 6.0 V
I
L
= 50 mA
I
L
= 100 mA
I
L
= 150 mA
0.00
0.02
0.04
0.06
0.08
0.10
0.12
-
-
-
5
2
3
5
6
8
9
1
1
Junction Temperature (°C)
D
V
R
= 5.0V
C
OUT
= 3.3 μF
I
L
= 50 mA
I
L
= 100 mA
I
L
= 150 mA
150mA
Load
100mA
Load Current
100mV/DIV
V
IN
= 3.8V
V
OUT
= 2.8V
C
IN
= 1
μ
F Ceramic
C
= 1
F Ceramic
Frequency = 1 kHz
V
OUT
150mA
Load
100mA
Load Current
100mV / DIV
V
IN
= 3.0V
V
OUT
= 2.8V
C
IN
= 1
μ
F Ceramic
C
OUT
= 10
μ
F Ceramic
Frequency = 10 kHz
V
OUT
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