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參數(shù)資料
| 型號(hào)： | TC1500H |
| 廠(chǎng)商： | 光寶科技股份有限公司 |
| 英文描述： | SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
| 中文描述： | 表面貼裝晶閘管浪涌保護(hù)器 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | TC1500H |
TC0640H thru TC3500H
FEATURES
Oxide Glass Passivated Junction
Bidirectional protection in a single device
Surge capabilities up to 100A @ 10/1000us or 400 @
8/20us
High off state Impedance and low on state voltage
Plastic material has UL flammability classification
94V-0
MECHANICAL DATA
Case : Molded plastic
Polarity : Denotes none cathode band
Weight : 0.093 grams
SURFACE MOUNT
THYRISTOR SURGE PROTECTIVE DEVICE
VDRM
-
58 to 320
Volts
-
100
Amperes
IPP
MAXIMUM RATINGS
MAXIMUM RATED SURGE WAVEFORM
WAVEFORM
THERMAL RESISTANCE
℃
/W
℃
/W
UNIT
SYMBOL
%/
℃
Junction to leads
Junction to ambient on print circuit (on recommended pad layout)
CHARACTERISTICS
Typical positive temperature coefficient for brekdown voltage
Rth
(J-L)
Rth
(J-A)
△
V
BR
/
△
T
J
0.1
VALUE
20
100
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
STANDARD
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K20/21
FCC Part 68
GR-1089-CORE
I
PP
(A)
500
400
250
200
160
100
I
P
,
100
50
0
tr
tp
TIME
Half value
Peak value (Ipp)
tr= rise time to peak value
tp= Decay time to half value
SEMICONDUCTOR
LITE-ON
Bi-Directional
UNIT
SYMBOL
℃
Non-repetitive peak impulse current @ 10/1000us
Non-repetitive peak On-state current @ 8.3ms (one half cycle)
CHARACTERISTICS
storage temperature range
I
PP
I
TSM
T
J
T
STG
A
A
-55 to +150
VALUE
100
50
Junction temperature range
-40 to +150
℃
REV. 0, 03-Dec-2001, KSWC02
SMC
All Dimensions in millimeter
SMC
MIN.
6.60
5.59
2.92
0.15
7.75
0.05
2.01
0.76
DIM.
A
B
MAX.
7.11
6.22
C
D
E
F
G
H
3.18
0.31
8.13
0.20
2.62
1.52
C
H
E
F
G
D
B
A
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