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參數(shù)資料
| 型號： | TC1307 |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | Four-Channel CMOS LDO with Select Mode, Shutdown and Independent Reset |
| 中文描述： | 四通道CMOS低壓降穩(wěn)壓器的選擇模式，關(guān)機(jī)和獨(dú)立復(fù)位 |
| 文件頁數(shù)： | 4/28頁 |
| 文件大?。?/td> | 553K |
| 代理商： | TC1307 |
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TC1307
DS21702A-page 4
2002 Microchip Technology Inc.
Reset Threshold Voltage
V
TH
2.59
2.55
2.63
—
2.66
2.70
V
V
T
A
= +25°C
T
A
= -40°C to +125°C
See Figure 4-2
Reset Circuit Supply Current
I
VDET
V
TH-TEMP
—
20
40
μA
RESET = Open
Reset Threshold Voltage
Temperature Coefficient
—
30
—
ppm/°C
Detect Threshold to RESET
Active Time Delay
T
VDET-RESET
—
135
—
μsec
V
DET
= V
TH
to V
TH
- 100 mV,
See Figure 4-2
Reset Time-out Period
T
RESET
V
OL-RES
140
300
560
msec
See Figure 4-2
RESET Output Voltage Low
—
—
0.3
V
V
DET
= V
TH-min
I
SINK
= 1.2 mA
V
DET
= V
TH-min
I
SINK
= 3.2 mA
V
DET
> 1.0V I
SINK
= 50 μA
Note 8
, See Figure 4-2
—
—
0.4
—
—
0.3
RESET Output Voltage High
V
OH-RES
0.8*V
DET
V
DET
-
1.5V
—
—
V
I
SOURCE
= 500 μA
Isource = 800 μA
V
DET
>V
TH-max
(Both cases),
See Figure 4-2
Temperature Ranges:
Maximum Junction Temperature
Range
T
J
-40
—
+150
°C
Maximum Junction Temperature
Range
T
J
-40
—
+125
°C
Storage Temperature Range
T
A
-65
—
+150
°C
Thermal Package Resistances:
Thermal Resistance, 16L-QSOP
θ
JA
—
112.4
—
°C/W
EIA/JEDEC JESD51-751-7
4 Layer Board
Unless otherwise specified, all limits are established for V
IN
= V
R
+1, I
L
= 100 μA, C
L
= 3.3 μF, SHDN > V
IH
, T
A
= 25°C.
Boldface
type specifications apply for junction temperatures, T
J
(
Note 9
) of -40°C to +125°C.
Parameter
Sym
Min
Typ
Max
Units
Conditions
Note 1:
The minimum V
IN
must meet two conditions
:
V
IN
≥
2.7
V
and V
IN
≥
(V
R
+ 2.5%)
+
V
DROPOUT
.
2:
V
R
is the nominal regulator output voltage. For example: V
R
= 1.8V, 2.5V, 2.8V or 3.0V.
3:
TCV
OUT
= (V
OUT-HIGH
- V
OUT-LOW
)
*
10
6
/ (
V
R
*
Temperature),
V
OUT-HIGH
=
Highest voltage measured over the tempera-
ture range. V
OUT-LOW
= Lowest voltage measured over the temperature range.
4:
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is
tested over a load range from 1mA to the maximum specified output current. Changes in output voltage due to heating
effects are determined using thermal regulation specification TCV
OUT
.
5:
Thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied.
Specifications are for a current pulse equal to I
LMAX
at V
IN
= 6.0V for t = 10 msec.
6:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value
with a 1V differential applied.
7:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temper-
ature and the thermal resistance from junction to air. (i.e. T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power dissipa-
tion will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained junction
temperatures above 150°C can impact the device reliability.
8:
V
TH-MIN
= 2.55V and V
TH-MAX
= 2.70V.
9:
The Junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the Ambi-
ent temperature is not significant.
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