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參數(shù)資料
| 型號(hào)： | TC1307 |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | Four-Channel CMOS LDO with Select Mode, Shutdown and Independent Reset |
| 中文描述： | 四通道CMOS低壓降穩(wěn)壓器的選擇模式，關(guān)機(jī)和獨(dú)立復(fù)位 |
| 文件頁數(shù)： | 3/28頁 |
| 文件大小： | 553K |
| 代理商： | TC1307 |
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2002 Microchip Technology Inc.
DS21702A-page 3
TC1307
VOUT Temperature Coefficient
LDO1/LDO2/LDO3/LDO4
TCV
OUT
—
20
40
—
ppm/°C
Note 3
Line Regulation LDO1/LDO2/
LDO3/LDO4
V
OUT
/(V
OUT
x
V
IN
)
—
0.05
0.2
%/V
(V
R
+1)
≤
V
IN
≤
6.0V
Load Regulation
LDO1/LDO2/LDO3/LDO4
V
OUT
/V
OUT
—
—
2.0
%
I
L
= 0.1 mA to I
OUT_MAX
Note 4
Thermal Regulation
LDO1/LDO2/LDO3/LDO4
V
OUT
/
P
D
—
0.04
—
V/W
Note 5
Dropout Voltage
LDO1/LDO2/LDO3/LDO4
V
IN
-V
OUT
—
2
—
mV
I
L
= 100 μA,
Note 6
I
L
= 20 mA,
Note 6
I
L
= 50 mA,
Note 6
I
L
= 150 mA,
Note 6
—
15
—
—
35
90
—
100
280
Output Noise
LDO1/LDO2/LDO3/LDO4
Over Temperature Protection Characteristics:
e
N
—
1.2
—
μV/(Hz)
I
OUT
= 100 mA, f = 10 kHz
C
OUT
= 1 μF to noise
Thermal Shutdown Protection
T
SD
TSD
—
150
—
°C
Note 7
Thermal Shutdown Hysteresis
SHDN Input Characteristics:
—
10
—
°C
SHDN Input High Threshold
V
IH
V
IL
t
WK
60
—
—
% of V
IN
V
IN
= 2.7V to 6.0V
% of V
IN
V
IN
= 2.7V to 6.0V
μsec
V
IN
= 5V, I
L
= 100 mA,
C
OUT
= 1 μF, C
IN
= 1 μF,
see Figure 4-1
SHDN Input Low Threshold
—
—
15
Wake-up Time
(from SHDN mode)
—
10
—
Settling Time
(from SHDN mode)
t
S
—
40
—
μsec
V
IN
= 5V, I
L
= 100 mA,
C
OUT
= 1 μF, C
IN
= 1 μF,
See Figure 4-1
Shutdown Leakage Current
I
SHDN
—
±0.01
—
nA
V
SHDN
= V
IN
or GND
SELECT Input Characteristics:
SELECT Input High Threshold
V
SELH
V
SELL
I
SELECT
V
IN
-0.2
—
—
—
V
V
IN
= 2.7V to 6.0V
V
IN
= 2.7V to 6.0V
V
SELECT
= V
IN
V
SELECT
= GND
SELECT Input Low Threshold
—
0.2
V
SELECT Input Leakage
Current
—
—
±0.11
±0.06
—
—
μA
RESET Output Characteristics:
Detect Operating
Voltage Range
Note 1:
The minimum V
IN
must meet two conditions
:
V
IN
≥
2.7
V
and V
IN
≥
(V
R
+ 2.5%)
+
V
DROPOUT
.
2:
V
R
is the nominal regulator output voltage. For example: V
R
= 1.8V, 2.5V, 2.8V or 3.0V.
3:
TCV
OUT
= (V
OUT-HIGH
- V
OUT-LOW
)
*
10
6
/ (
V
R
*
Temperature),
V
OUT-HIGH
=
Highest voltage measured over the tempera-
ture range. V
OUT-LOW
= Lowest voltage measured over the temperature range.
4:
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is
tested over a load range from 1mA to the maximum specified output current. Changes in output voltage due to heating
effects are determined using thermal regulation specification TCV
OUT
.
5:
Thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied.
Specifications are for a current pulse equal to I
LMAX
at V
IN
= 6.0V for t = 10 msec.
6:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value
with a 1V differential applied.
7:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temper-
ature and the thermal resistance from junction to air. (i.e. T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power dissipa-
tion will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained junction
temperatures above 150°C can impact the device reliability.
8:
V
TH-MIN
= 2.55V and V
TH-MAX
= 2.70V.
9:
The Junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the Ambi-
ent temperature is not significant.
V
DET
1.0
1.2
—
—
6.0
6.0
V
T
A
= 0°C to +70°C
T
A
= -40°C to +125°C
Unless otherwise specified, all limits are established for V
IN
= V
R
+1, I
L
= 100 μA, C
L
= 3.3 μF, SHDN > V
IH
, T
A
= 25°C.
Boldface
type specifications apply for junction temperatures, T
J
(
Note 9
) of -40°C to +125°C.
Parameter
Sym
Min
Typ
Max
Units
Conditions
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