參數(shù)資料
型號(hào)： TC10735.0VCT713
廠商： Microchip Technology Inc.
英文描述： 50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass
中文描述： 為50mA和100mA的CMOS低壓降穩(wěn)壓器具有關(guān)斷功能，錯(cuò)誤輸出和VREF繞道
文件頁(yè)數(shù)： 3/22頁(yè)
文件大?。?/td> 651K
代理商： TC10735.0VCT713
2007 Microchip Technology Inc.
DS21354D-page 3
TC1072/TC1073
SHDN Input
V
IH
V
IL
ERROR Open Drain Output
SHDN Input High Threshold
45
—
—
%V
IN
%V
IN
V
IN
= 2.5V to 6.5V
V
IN
= 2.5V to 6.5V
SHDN Input Low Threshold
—
—
15
V
IN
MIN
V
OL
V
TH
V
HYS
t
DELAY
Minimum V
IN
Operating Voltage
Output Logic Low Voltage
1.0
—
—
V
—
—
400
mV
1 mA Flows to ERROR
ERROR Threshold Voltage
—
0.95 x V
R
50
—
V
See
Figure 4-2
ERROR Positive Hysteresis
—
—
mV
Note 7
V
OUT
to ERROR Delay
—
2.5
—
ms
Vout falling from V
R
to
V
R
-10%
TC1072/TC1073 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics:
Unless otherwise noted, V
IN
= V
OUT
+ 1V, I
L
= 0.1 mA, C
L
= 3.3
μ
F, SHDN > V
IH
, T
A
= +25°C.
Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
Note
1:
2:
V
is the regulator output voltage setting. For example: V
R
= 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC V
OUT
= (V
OUT
MAX
– V
OUT
MIN
) x 10
V
OUT
x
Δ
T
3:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I
at V
= 6V for T = 10 ms.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
, T
,
θ
). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see
Section 5.0 “Thermal Considerations”
for more details.
Hysteresis voltage is referenced by V
.
Apply for Junction Temperatures of -40°C to +85°C.
The minimum V
IN
has to justify the conditions = V
IN
≥
V
R
+ V
DROPOUT
and V
IN
≥
2.7V for I
L
= 0.1 mA to I
OUT
MAX
.
4:
5:
6:
7:
8:
9:
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