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參數(shù)資料
| 型號： | TC10732.5VCT713 |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | 50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass |
| 中文描述： | 為50mA和100mA的CMOS低壓降穩(wěn)壓器具有關(guān)斷功能，錯誤輸出和VREF繞道 |
| 文件頁數(shù)： | 2/22頁 |
| 文件大?。?/td> | 651K |
| 代理商： | TC10732.5VCT713 |
TC1072/TC1073
DS21354D-page 2
2007 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings
Input Voltage .........................................................6.5V
Output Voltage...........................(-0.3V) to (V
IN
+ 0.3V)
Power Dissipation................Internally Limited
(Note 6)
Maximum Voltage on Any Pin ........V
IN
+0.3V to -0.3V
Operating Temperature Range......-40°C < T
J
< 125°C
Storage Temperature..........................-65°C to +150°C
Note:
Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
TC1072/TC1073 ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise noted, V
IN
= V
OUT
+ 1V, I
L
= 0.1 mA, C
L
= 3.3
μ
F, SHDN > V
IH
, T
A
= +25°C.
Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
V
IN
I
OUT
MAX
Input Operating Voltage
2.7
—
6.0
V
Note 9
Maximum Output Current
50
100
—
—
—
—
mA
mA
TC1072
TC1073
V
OUT
Output Voltage
V
R
–
2.5%
V
R
±0.5%
V
R
+ 2.5%
V
Note 1
TCV
OUT
V
OUT
Temperature Coefficient
—
—
20
40
—
—
ppm/°C
Note 2
Δ
V
OUT
/
Δ
V
IN
Δ
V
OUT
/V
OUT
Line Regulation
—
0.05
0.35
%
(V
R
+ 1V)
≤
V
IN
≤
6V
I
L
= 0.1 mA to I
OUT
MAX
(Note 3)
Load Regulation
—
0.5
2.0
%
V
IN
-V
OUT
Dropout Voltage
—
—
—
—
2
65
85
180
—
—
120
250
mV
I
L
= 0.1 mA
I
L
= 20 mA
I
L
= 50 mA
I
L
= 100 mA
(Note 4)
,
TC1073
I
IN
I
INSD
PSRR
Supply Current
—
50
80
μA
SHDN = V
IH
, I
L
=
0
(Note 8)
SHDN = 0V
F
RE
≤
1 kHz
V
OUT
= 0V
Notes 5, 6
Shutdown Supply Current
—
0.05
0.5
μA
Power Supply Rejection Ratio
—
64
—
dB
I
OUT
SC
Δ
V
OUT
/
Δ
P
D
T
SD
Δ
T
SD
eN
Output Short Circuit Current
—
300
450
mA
Thermal Regulation
—
0.04
—
V/W
Thermal Shutdown Die Temperature
—
160
—
°C
Thermal Shutdown Hysteresis
—
10
—
°C
Output Noise
—
260
—
nV/
√
Hz
I
L
= I
OUT
MAX
470 pF from Bypass to GND
Note
1:
2:
V
is the regulator output voltage setting. For example: V
R
= 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC V
OUT
= (V
OUT
MAX
– V
OUT
MIN
) x 10
V
OUT
x
Δ
T
3:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I
at V
= 6V for T = 10 ms.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
, T
,
θ
). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see
Section 5.0 “Thermal Considerations”
for more details.
Hysteresis voltage is referenced by V
.
Apply for Junction Temperatures of -40°C to +85°C.
The minimum V
IN
has to justify the conditions = V
IN
≥
V
R
+ V
DROPOUT
and V
IN
≥
2.7V for I
L
= 0.1 mA to I
OUT
MAX
.
4:
5:
6:
7:
8:
9:
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