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參數(shù)資料
| 型號(hào)： | TC1073-50VCH |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | 50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass |
| 中文描述： | 為50mA和100mA的CMOS低壓降穩(wěn)壓器具有關(guān)斷功能，錯(cuò)誤輸出和VREF繞道 |
| 文件頁數(shù)： | 3/20頁 |
| 文件大小： | 564K |
| 代理商： | TC1073-50VCH |
2002 Microchip Technology Inc.
DS21354B-page 3
TC1072/TC1073
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage......................................................... 6.5V
Output Voltage...........................(-0.3V) to (V
IN
+ 0.3V)
Power Dissipation............... Internally Limited
(Note 6)
Maximum Voltage on Any Pin ........ V
IN
+0.3V to -0.3V
Operating Temperature Range......-40°C < T
J
< 125°C
Storage Temperature......................... -65°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1072/TC1073 ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
V
IN
= V
OUT
+ 1V, I
L
= 0.1mA, C
L
= 3.3
μ
F, SHDN > V
IH
, T
A
= 25°C, unless otherwise noted.
Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
V
IN
I
OUT
MAX
Input Operating Voltage
Maximum Output Current
2.7
50
100
—
—
—
6.0
—
—
V
Note 9
TC1072
TC1073
Note 1
Note 2
mA
mA
V
V
OUT
TCV
OUT
Output Voltage
V
OUT
Temperature Coefficient
V
R
– 2.5%
V
R
±0.5%
—
—
—
—
V
R
+ 2.5%
—
—
0.35
2.0
20
40
0.05
0.5
ppm/°C
V
OUT
/
V
IN
V
OUT
/V
OUT
Line Regulation
Load Regulation
%
%
(V
R
+ 1V)
≤
V
IN
≤
6V
I
L
= 0.1mA to I
OUT
MAX
(Note 3)
I
L
= 0.1mA
I
L
= 20mA
I
L
= 50mA
I
L
= 100mA
(Note 4)
, TC1073
SHDN = V
IH
, I
L
= 0
(Note 8)
SHDN = 0V
F
RE
≤
1kHz
V
OUT
= 0V
Notes 5, 6
V
IN
-V
OUT
Dropout Voltage
—
—
—
—
—
—
—
—
—
—
—
—
2
65
85
180
50
0.05
64
300
0.04
160
10
260
—
—
120
250
80
0.5
—
450
—
—
—
—
mV
I
IN
I
INSD
PSRR
I
OUT
SC
V
OUT
/
P
D
T
SD
T
SD
eN
Supply Current
Shutdown Supply Current
Power Supply Rejection Ratio
Output Short Circuit Current
Thermal Regulation
Thermal Shutdown Die Temperature
Thermal Shutdown Hysteresis
Output Noise
μ
A
μ
A
dB
mA
V/W
°C
°C
nV/
√
Hz
I
L
= I
OUT
470pF from Bypass to GND
SHDN Input
V
IH
V
IL
Note
SHDN Input High Threshold
SHDN Input Low Threshold
45
—
—
—
—
15
%V
IN
%V
IN
V
IN
= 2.5V to 6.5V
V
IN
= 2.5V to 6.5V
1:
2:
V
is the regulator output voltage setting. For example: V
R
= 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC V
OUT
= (V
OUT
MAX
– V
OUT
MIN
) x 10
V
OUT
x
T
3:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I
at V
= 6V for T = 10 msec.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
, T
,
θ
). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
Hysteresis voltage is referenced by V
.
Apply for Junction Temperatures of -40°C to +85°C.
The minimum V
IN
has to justify the conditions = V
IN
≥
V
R
+ V
DROPOUT
and V
IN
≥
2.7V for I
L
= 0.1mA to I
OUT
MAX
.
4:
5:
6:
7:
8:
9:
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