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| 型號(hào)： | TC1043CEQR |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | Linear Building Block . Low Power Voltage Reference with Dual Op Amp, Dual Comparator, and Shutdown Mode |
| 中文描述： | 線(xiàn)性積木。低功耗電壓參考與雙路運(yùn)算放大器，雙比較，和關(guān)斷模式 |
| 文件頁(yè)數(shù)： | 2/20頁(yè) |
| 文件大?。?/td> | 508K |
| 代理商： | TC1043CEQR |
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TC1043
DS21347B-page 2
2002 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................6.0V
Voltage on Any Pin...........(V
SS
– 0.3V) to (V
DD
+0.3V)
Junction Temperature.......................................+150°C
Operating Temperature Range.............-40°C to +85°C
Storage Temperature Range..............-55°C to +150°C
*Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only and functional operation of the
device at these or any other conditions above those indi-
cated in the operation sections of the specifications is not
implied. Exposure to Absolute Maximum Rating conditions
for extended periods my affect device reliability.
TC1043 ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Typical values apply at 25°C and V
DD
= 3V. Minimum and maximum values apply for T
A
= -40° to
+ 85°C, and V
DD
= 1.8V to 5.5V, unless otherwise specified.
Symbol
Parameter
Min.
Typ
Max
Units
Test Conditions
V
DD
I
Q
Supply Voltage
1.8
—
5.5
V
μ
A
Supply Current Operating
—
16
30
All outputs unloaded,
SHDN = V
DD
CMPTR2 and V
REF
Outputs
unloaded, SHDN = V
SS
I
SHDN
Supply Current, Shutdown
—
6
10
μ
A
Shutdown Input
V
IH
V
IL
I
SI
Op Amps
Input High Threshold
80% V
DD
—
—
—
V
Input Low Threshold
—
20% V
DD
±100
V
Shutdown Input Current
—
—
nA
T
SEL
Select Time
—
15
—
μ
sec
(V
OUT
from SHDN = V
IH
)
R
L
= 10k
to V
SS
(V
OUT
from SHDN = V
IL
)
R
L
= 10k
to V
SS
SHDN = V
SS
SHDN = V
SS
R
L
= 10k
, V
DD
= 5V
T
DESEL
Deselect Time
—
100
—
nsec
R
OUT
(SD)
C
OUT
(SD)
A
VOL
V
ICMR
Output Resistance in Shutdown
20
—
—
M
pF
Output Capacitance in Shutdown
—
—
6
Large Signal Voltage Gain
—
100
—
V/mV
Common Mode Input Voltage Range
V
SS
- 0.2
—
V
DD
+ 0.2
±500
±1.5
V
μ
V
mV
V
OS
Input Offset Voltage
±100
±0.3
V
DD
= 3V, V
CM
= 1.5V, T
A
=
25°C, T
A
= -40°C to 85°C
T
A
= 25°C, V
CM
= V
DD
to V
SS
V
DD
= 3V, V
CM
= 1.5V
V
DD
= 1.8V to 5.5V
V
O
= V
DD
to V
SS
C
L
= 100pF
R
L
= 1M
to GND
Gain = 1
V
IN
= V
SS
to V
DD
R
L
= 10k
T
A
= 25°C, V
DD
= 5V
V
CM
= V
DD
to V
SS
T
A
= 25°C, V
CM
= V
SS
V
DD
= V
DD
to V
SS
IN+ = V
DD
, IN- = V
SS
Output Shorted to V
SS
V
DD
= 1.8V, Gain = 1
IN+ = V
SS
, IN- = V
DD
Output Shorted to V
DD
V
DD
= 1.8V, Gain = 1
nV/
√
Hz 1kHz
I
B
V
OS(DRIFT)
Input Bias Current
-100
50
100
pA
Input Offset Voltage Drift
—
±4
—
μ
V/°C
GBWP
Gain-Bandwidth Product
—
90
—
kHz
SR
Slew Rate
—
35
—
mV/
μ
sec
V
OUT
Output Signal Swing
V
SS
+ 0.05
—
V
SS
- 0.05
V
CMRR
Common Mode Rejection Ratio
70
—
—
dB
PSRR
Power Supply Rejection Ratio
80
—
—
dB
I
SRC
Output Source Current
3
—
—
mA
I
SINK
Output Sink Current
4
—
—
mA
En
Input Noise Voltage
—
10
—
μ
V
PP
en
Input Noise Voltage Density
—
125
—
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