- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361363 > TBN6301 (Tachyonics CO,. LTD.) NPN SILICON RF TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | TBN6301 |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | NPN SILICON RF TRANSISTOR |
| 中文描述： | NPN硅射頻晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 232K |
| 代理商： | TBN6301 |
□
Features
- High gain bandwidth product
f
T
= 6 GHz @ V
CE
= 3 V, I
C
= 10 mA
f
T
= 7.5 GHz @ V
CE
= 5 V, I
C
= 20 mA
- High power gain
|S
21
|
2
= 9 dB @ V
CE
= 3 V, I
C
= 10 mA, f = 1 GHz
- Low noise figure
NF = 1.4 dB @ V
CE
= 3 V, I
C
= 10 mA, f = 1 GHz
□
Applications
- UHF and VHF wide band amplifier
Page 1 of 6
http://www.tachyonics.co.kr
Dec. 2005.
Rev. 1.0
NPN SILICON RF TRANSISTOR
Preliminary Specification
TBN6301 series
□
Absolute Maximum Ratings
(T
A
= 25
℃
)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Operating Junction Temperature
Storage Temperature
150
℃
I
C
75
mA
mW
Unit
BV
CBO
20
V
Parameter
Symbol
P
tot
150
Ratings
℃
T
stg
-65 ~ 150
V
BV
EBO
3
V
BV
CEO
8
T
j
Caution
:
E
lectro
S
tatic
D
ischarge sensitive device
SOT323
Pin Configuration
(TBN6301U)
1. Base
2. Emitter
3. Collector
Unit in mm
2.1
±
0.1
1.25
±
0.05
1
±
0
2
±
0
0
±
0
1
2
3
0
±
0
0
0.1 Min.
0
±
0
相關PDF資料 |
PDF描述 |
|---|---|
| TBN6301E | NPN SILICON RF TRANSISTOR |
| TBN6301KF | NPN SILICON RF TRANSISTOR |
| TBN6301S | NPN SILICON RF TRANSISTOR |
| TBN6301U | NPN SILICON RF TRANSISTOR |
| TC03VNB | PRECISION TEMPERATURE-TO-VOLTAGE CONVERTERS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TBN6301E | 制造商:AUK 制造商全稱:AUK corp 功能描述:Si NPN Transistor |
| TBN6301KF | 制造商:TACHYONICS 制造商全稱:TACHYONICS 功能描述:NPN SILICON RF TRANSISTOR |
| TBN6301S | 制造商:AUK 制造商全稱:AUK corp 功能描述:Si NPN Transistor |
| TBN6301U | 制造商:AUK 制造商全稱:AUK corp 功能描述:Si NPN Transistor |
| TBN6501U | 制造商:AUK 制造商全稱:AUK corp 功能描述:Si NPN Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復。