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參數(shù)資料
| 型號(hào)： | TBN6301E |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | NPN SILICON RF TRANSISTOR |
| 中文描述： | NPN硅射頻晶體管 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 232K |
| 代理商： | TBN6301E |
□
Features
- High gain bandwidth product
f
T
= 6 GHz @ V
CE
= 3 V, I
C
= 10 mA
f
T
= 7.5 GHz @ V
CE
= 5 V, I
C
= 20 mA
- High power gain
|S
21
|
2
= 9 dB @ V
CE
= 3 V, I
C
= 10 mA, f = 1 GHz
- Low noise figure
NF = 1.4 dB @ V
CE
= 3 V, I
C
= 10 mA, f = 1 GHz
□
Applications
- UHF and VHF wide band amplifier
Page 1 of 6
http://www.tachyonics.co.kr
Dec. 2005.
Rev. 1.0
NPN SILICON RF TRANSISTOR
Preliminary Specification
TBN6301 series
□
Absolute Maximum Ratings
(T
A
= 25
℃
)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Operating Junction Temperature
Storage Temperature
150
℃
I
C
75
mA
mW
Unit
BV
CBO
20
V
Parameter
Symbol
P
tot
150
Ratings
℃
T
stg
-65 ~ 150
V
BV
EBO
3
V
BV
CEO
8
T
j
Caution
:
E
lectro
S
tatic
D
ischarge sensitive device
Pin Configuration
(TBN6301U)
1. Base
2. Emitter
3. Collector
Unit in mm
2.1
±
0.1
1.25
±
0.05
1
±
0
2
±
0
0
±
0
1
2
3
0
±
0
0
0.1 Min.
0
±
0
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