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參數(shù)資料
| 型號： | TBB1002 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| 中文描述： | 雙內(nèi)建偏置電路場效應(yīng)晶體管集成電路甚高頻/超高頻射頻放大器 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 66K |
| 代理商： | TBB1002 |
TBB1002
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
V
G1S
6
V
Gate1 to source voltage
+6
-0
V
Gate2 to source voltage
V
G2S
+6
-0
V
Drain current
I
D
Pch
*3
30
mA
Channel power dissipation
250
mW
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes: 3. Value on the glass epoxy board (49mm
×
38mm
×
1mm).
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
The below specification are applicable for UHF unit (FET1)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
6
—
—
V
I
D
= 200
μ
A, V
G1S
= V
G2S
= 0
Gate1 to source breakdown
voltage
V
(BR)G1SS
+6
—
—
V
I
G1
= +10
μ
A, V
G2S
= V
DS
= 0
Gate2 to source breakdown
voltage
V
(BR)G2SS
+6
—
—
V
I
G2
= +10
μ
A, V
G1S
= V
DS
= 0
Gate1 to source cutoff current
I
G1SS
I
G2SS
—
—
+100
nA
V
G1S
= +5V, V
G2S
= V
DS
= 0
V
G2S
= +5V, V
G1S
= V
DS
= 0
V
DS
= 5V, V
G2S
= 4V, I
D
= 100
μ
A
V
DS
= 5V, V
G1S
= 5V, I
D
= 100
μ
A
V
DS
= 5V, V
G1
= 5V
V
G2S
= 4V, R
G
= 100k
V
DS
= 5V, V
G1
= 5V, V
G2S
=4V
R
G
= 100k
, f = 1kHz
V
DS
= 5V, V
G1
= 5V
V
G2S
=4V, R
G
= 100k
f = 1MHz
Gate2 to source cutoff current
—
—
+100
nA
Gate1 to source cutoff voltage V
G1S(off)
Gate2 to source cutoff voltage V
G2S(off)
Drain current
0.5
0.75
1.0
V
0.5
0.75
1.0
V
I
D(op)
13
17
21
mA
Forward transfer admittance
|y
fs
|
21
26
31
mS
Input capacitance
c
iss
c
oss
c
rss
PG
1.4
1.8
2.2
pF
Output capacitance
1.0
1.4
1.8
pF
Reverse transfer capacitance
—
0.02
0.04
pF
Power gain
16
21
—
dB
V
DS
= V
= 5V, V
= 4V
R
= 100k
, f = 900MHz
Zi=S11*, Zo=S22*(:PG)
Noise figure
NF
—
1.7
2.5
dB
Zi=S11opt (:NF)
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| TBB1002_06 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
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