參數(shù)資料
型號： TBB1002
廠商： Hitachi,Ltd.
英文描述： Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
中文描述： 雙內(nèi)建偏置電路場效應(yīng)晶體管集成電路甚高頻/超高頻射頻放大器
文件頁數(shù)： 1/11頁
文件大?。?/td> 66K
代理商： TBB1002
TBB1002
Twin Build in Biasing Circuit MOS FET IC
VHF/UHF RF Amplifier
ADE-208-987F (Z)
7th. Edition
Dec. 2000
Features
Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
Suitable for World Standard Tuner RF amplifier.
Very useful for total tuner cost reduction.
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,
Rs = 0 conditions.
Provide mini mold packages; CMPAK-6
Outline
CMPAK-6
3
1
6
4
1. Gate-1(1)
2. Source
3. Drain(1)
4. Drain(2)
5. Gate-2
6. Gate-1(2)
2
5
Notes:
1.
2.
Marking is “BM”.
TBB1002 is individual type number of HITACHI TWIN BBFET.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TBB1002_06 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
TBB1002_11 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
TBB1002BMTL-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
TBB1004 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
TBB1004_06 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
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