參數(shù)資料
型號: TB62206FG
廠商: Toshiba Corporation
英文描述: BiCD PWM 2−Phase Bipolar Stepping Motor Driver
文件頁數(shù): 6/27頁
文件大?。?/td> 369K
代理商: TB62206FG
TB62206FG
2005-03-02
6
Electrical Characteristics
1
(unless otherwise specified, Ta
=
25°C, V
DD
=
5 V, V
M
=
24 V)
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
HIGH
V
IN (H)
2.0
V
DD
V
DD
+
0.4
Input voltage
LOW
V
IN (L)
DC
Data input pins
GND
0.4
GND
0.8
V
Input hysteresis voltage
V
IN (HIS)
DC
Data input pins
200
400
700
mV
I
IN (H)
Data input pins with resistor
35
50
75
I
IN (H)
1.0
Input current
I
IN (L)
DC
Data input pins without resistor
1.0
μ
A
I
DD1
V
DD
=
5 V, all inputs connected
to ground, Logic, output all off
1.0
2.0
3.0
Power dissipation (V
DD
pin)
I
DD2
DC
Output OPEN, f
PHASE
=
1.0 kHz
LOGIC ACTIVE, V
DD
=
5 V,
ChargePump
=
charged
1.0
2.5
3.5
mA
I
M1
Output OPEN, all inputs
connected to ground, Logic,
output all off, ChargePump
=
no operation
1.0
2.0
3.0
I
M2
OUT OPEN, f
PHASE
=
1 kHz
LOGIC ACTIVE, V
DD
=
5 V,
V
M
=
24 V, Output off,
ChargePump
=
charged
2.0
4.0
5.0
Power dissipation (V
M
pin)
I
M3
DC
OUT OPEN, f
PHASE
=
4 kHz
LOGIC ACTIVE, 100 kHz
chopping (emulation), Output
OPEN,
ChargePump
=
charged
10
13
mA
Output standby current
Upper
DC
DC
V
RS
=
V
M
=
24 V, V
OUT
=
0 V,
STANDBY
=
H, PHASE
=
H
200
150
μ
A
Output bias current
Upper
I
OB
DC
V
OUT
=
0 V,
STANDBY
=
H
V
RS
=
V
M
=
CcpA
=
V
OUT
=
24
V, LOGIC IN
=
ALL
=
L
100
50
μ
A
Output leakage current
Lower
I
OL
DC
1.0
1.0
μ
A
HIGH
(reference)
V
RS (H)
V
ref
=
3.0 V, V
ref
(Gain)
=
1/5.0
TORQUE
=
(H)
=
100% set
100
Comparator reference
voltage ratio
LOW
V
RS (L)
DC
V
ref
=
3.0 V, V
ref
(Gain)
=
1/5.0
TORQUE
=
(L)
=
71% set
66
71
76
%
Output current differential
I
OUT1
DC
Differences between output
current channels
5
5
%
Output current setting differential
I
OUT2
DC
I
OUT
=
1000 mA
V
RS
=
24 V, V
M
=
24 V
STANDBY
=
L
5
5
%
RS pin current
I
RS
DC
1
2
μ
A
R
ON (D-S) 1
I
OUT
=
1.0 A, V
DD
=
5.0 V
T
j
=
25°C, Drain-Source
I
OUT
=
1.0 A, V
DD
=
5.0 V
T
j
=
25°C, Source-Drain
I
OUT
=
1.0 A, V
DD
=
5.0 V
T
j
=
105°C, Drain-Source
I
OUT
=
1.0 A, V
DD
=
5.0 V
T
j
=
105°C, Source-Drain
0.5
0.6
R
ON (S-D) 1
0.5
0.6
R
ON (D-S) 2
0.6
0.75
Output transistor drain-source
ON-resistance
R
ON (S-D) 2
DC
0.6
0.75
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