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參數資料
| 型號： | TB28F016SC-110 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
| 中文描述： | 2M X 8 FLASH 3.3V PROM, 110 ns, PDSO44 |
| 封裝： | 13.30 X 28.20 MM, PLASTIC, SOP-44 |
| 文件頁數： | 8/42頁 |
| 文件大?。?/td> | 725K |
| 代理商： | TB28F016SC-110 |
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BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY
E
8
PRELIMINARY
Table 3. Pin Descriptions
(Continued)
Sym
Type
Name and Function
WE#
INPUT
WRITE ENABLE:
Controls writes to the CUI and array blocks. Addresses and data
are latched on the rising edge of the WE# pulse.
RY/BY#
OUTPUT
READY/BUSY#:
Indicates the status of the internal WSM. When low, the WSM is
performing an internal operation (block erase, program, or lock-bit configuration).
RY/BY#-high indicates that the WSM is ready for new commands, block erase or
program is suspended, or the device is in deep power-down mode. RY/BY# is
always active.
V
PP
SUPPLY
BLOCK ERASE, PROGRAM, LOCK-BIT CONFIGURATION POWER SUPPLY:
For erasing array blocks, programming data, or configuring lock-bits.
SmartVoltage Flash
→
3.3 V, 5 V, and 12 V V
PP
With V
PP
≤
V
PPLK
, memory contents cannot be altered. Block erase, program, and
lock-bit configuration with an invalid V
PP
(see DC Characteristics) produce spurious
results and should not be attempted.
V
CC
SUPPLY
DEVICE POWER SUPPLY:
Internal detection automatically configures the device
for optimized read performance. Do not float any power pins.
SmartVoltage Flash
→
2.7 V (Read-Only), 3.3 V, and 5 V V
CC
With V
CC
≤
V
LKO
, all write attempts to the flash memory are inhibited. Device
operations at invalid V
CC
voltages (see DC Characteristics) produce spurious
results and should not be attempted. Block erase, program, and lock-bit
configuration operations with V
CC
< 3.0 V are not supported.
SUPPLY
GROUND:
Do not float any ground pins.
GND
NC
NO CONNECT:
Lead is not internally connected; it may be driven or floated.
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