參數(shù)資料
型號: TAS5121A
廠商: Texas Instruments, Inc.
英文描述: DIGITAL AMPLIFIER POWER STAGE
中文描述: 數(shù)字放大器功率級
文件頁數(shù): 2/21頁
文件大?。?/td> 405K
代理商: TAS5121A
SLES094A - OCTOBER 2003 - REVISED MARCH 2004
www.ti.com
2
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during
storage or handling to prevent electrostatic damage to the MOS gates.
GENERAL INFORMATION
Terminal Assignment
The TAS5112A is offered in a thermally enhanced 56-pin
TSSOP DFD (thermal pad is on the top), shown as follows.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
GND
GND
GREG
OTW
SD_CD
SD_AB
PWM_DP
PWM_DM
RESET_CD
PWM_CM
PWM_CP
DREG_RTN
M3
M2
M1
DREG
PWM_BP
PWM_BM
RESET_AB
PWM_AM
PWM_AP
GND
DGND
GND
DVDD
GREG
GND
GND
GND
GVDD
BST_D
PVDD_D
PVDD_D
OUT_D
OUT_D
GND
GND
OUT_C
OUT_C
PVDD_C
PVDD_C
BST_C
BST_B
PVDD_B
PVDD_B
OUT_B
OUT_B
GND
GND
OUT_A
OUT_A
PVDD_A
PVDD_A
BST_A
GVDD
GND
DFD PACKAGE
(TOP VIEW)
Absolute Maximum Ratings
over operating free-air temperature range unless otherwise noted(1)
TAS5112A
UNITS
DVDD TO DGND
–0.3 V to 4.2 V
GVDD TO GND
33.5 V
PVDD_X TO GND (dc voltage)
PVDD_X TO GND (spike voltage(2))
33.5 V
48 V
OUT_X TO GND (dc voltage)
OUT_X TO GND (spike voltage(2))
33.5 V
48 V
BST_X TO GND (dc voltage)
BST_X TO GND (spike voltage(2))
GREG TO GND (3
)
48 V
53 V
14.2 V
PWM_XP, RESET, M1, M2, M3, SD,
OTW
–0.3 V to DVDD + 0.3 V
Maximum operating junction
temperature, TJ
Storage temperature
(1)Stresses beyond those listed under “absolute maximum ratings”
may cause permanent damage to the device. These are stress
ratings only, and functional operation of the device at these or any
other conditions beyond those indicated under “recommended
operating conditions” is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device
reliability.
(2)The duration of voltage spike should be less than 100 ns; see
application note SLEA025.
(3)GREG is treated as an input when the GREG pin is overdriven by
GVDD of 12 V.
Package Dissipation Ratings
–40
°
C to 150
°
C
–40
°
C to 125
°
C
PACKAGE
R
θ
JC
(
°
C/W)
R
θ
JA
(
°
C/W)
56-pin DFD TSSOP
(4)The TAS5112A package is thermally enhanced for conductive
cooling using an exposed metal pad area. It is impractical to use the
device with the pad exposed to ambient air as the only heat sinking
of the device.
For this reason, R
θ
JA, a system parameter that characterizes the
thermal treatment, is provided in the
Application Information
section
of the data sheet. An example and discussion of typical system
R
θ
JA values are provided in the
Thermal Information
section. This
example provides additional information regarding the power
dissipation ratings. This example should be used as a reference to
calculate the heat dissipation ratings for a specific application. TI
application engineering provides technical support to design
heatsinks if needed.
Ordering Information
1.14
See Note 4
TA
PACKAGE
TAS5112ADFD
DESCRIPTION
56-pin small TSSOP
0
°
C to 70
°
C
For the most current specification and package
information, refer to our Web site at www.ti.com.
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