參數(shù)資料
型號(hào)： T89C51CC01CA-SLSIM
廠商： Atmel
文件頁(yè)數(shù)： 123/123頁(yè)
文件大小： 0K
描述： IC 8051 MCU FLASH 32K 44PLCC
標(biāo)準(zhǔn)包裝： 27
系列： AT89C CAN
核心處理器： 8051
芯體尺寸： 8-位
速度： 40MHz
連通性： CAN，UART/USART
外圍設(shè)備： POR，PWM，WDT
輸入/輸出數(shù)： 32
程序存儲(chǔ)器容量： 32KB（32K x 8）
程序存儲(chǔ)器類型： 閃存
EEPROM 大?。?/td> 2K x 8
RAM 容量： 1.25K x 8
電壓 - 電源 (Vcc/Vdd)： 3 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 8x10b
振蕩器型： 外部
工作溫度： -40°C ~ 85°C
封裝/外殼： 44-LCC（J 形引線）
包裝： 管件
配用： AT89STK-06-ND - KIT DEMOBOARD 8051 MCU W/CAN
其它名稱： T89C51CC01CASLSIM
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2010 Microchip Technology Inc.
DS41303G-page 99
PIC18F2XK20/4XK20
7.0
DATA EEPROM MEMORY
The data EEPROM is a nonvolatile memory array, sep-
arate from the data RAM and program memory, which
is used for long-term storage of program data. It is not
directly mapped in either the register file or program
memory space but is indirectly addressed through the
Special Function Registers (SFRs). The EEPROM is
readable and writable during normal operation over the
entire VDD range.
Four SFRs are used to read and write to the data
EEPROM as well as the program memory. They are:
EECON1
EECON2
EEDATA
EEADR
EEADRH
The data EEPROM allows byte read and write. When
interfacing to the data memory block, EEDATA holds
the 8-bit data for read/write and the EEADR:EEADRH
register pair hold the address of the EEPROM location
being accessed.
The EEPROM data memory is rated for high erase/write
cycle endurance. A byte write automatically erases the
location and writes the new data (erase-before-write).
The write time is controlled by an on-chip timer; it will
vary with voltage and temperature as well as from chip-
to-chip. Please refer to parameter D122 (Table 26.10 in
limits.
7.1
EEADR and EEADRH Registers
The EEADR register is used to address the data
EEPROM for read and write operations. The 8-bit
range of the register can address a memory range of
256 bytes (00h to FFh). The EEADRH register expands
the range to 1024 bytes by adding an additional two
address bits.
7.2
EECON1 and EECON2 Registers
Access to the data EEPROM is controlled by two
registers: EECON1 and EECON2. These are the same
registers which control access to the program memory
and are used in a similar manner for the data
EEPROM.
The EECON1 register (Register 7-1) is the control reg-
ister for data and program memory access. Control bit
EEPGD determines if the access will be to program or
data EEPROM memory. When the EEPGD bit is clear,
operations will access the data EEPROM memory.
When the EEPGD bit is set, program memory is
accessed.
Control bit, CFGS, determines if the access will be to
the Configuration registers or to program memory/data
EEPROM memory. When the CFGS bit is set,
subsequent operations access Configuration registers.
When the CFGS bit is clear, the EEPGD bit selects
either program Flash or data EEPROM memory.
The WREN bit, when set, will allow a write operation.
On power-up, the WREN bit is clear.
The WRERR bit is set by hardware when the WR bit is
set and cleared when the internal programming timer
expires and the write operation is complete.
The WR control bit initiates write operations. The bit
can be set but not cleared by software. It is cleared only
by hardware at the completion of the write operation.
Control bits, RD and WR, start read and erase/write
operations, respectively. These bits are set by firmware
and cleared by hardware at the completion of the
operation.
The RD bit cannot be set when accessing program
memory (EEPGD = 1). Program memory is read using
table read instructions. See Section 6.1 “Table Reads
and Table Writes” regarding table reads.
The EECON2 register is not a physical register. It is
used exclusively in the memory write and erase
sequences. Reading EECON2 will read all ‘0’s.
Note:
During normal operation, the WRERR
may read as ‘1’. This can indicate that a
write operation was prematurely termi-
nated by a Reset, or a write operation was
attempted improperly.
Note:
The EEIF interrupt flag bit of the PIR2
register is set when the write is complete.
It must be cleared by software.
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