參數(shù)資料
型號(hào): T431616D-7C
廠商: TM Technology, Inc.
英文描述: 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
中文描述: 100萬(wàn)× 16內(nèi)存為512k × 16Bit的X 2Banks同步DRAM
文件頁(yè)數(shù): 62/74頁(yè)
文件大?。?/td> 781K
代理商: T431616D-7C
TE
CH
tm
T431616D/E
TM Technology Inc. reserves the right
P. 62
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
Figure 18.3. Full Page Read Cycle
(Burst Length=Full Page, CAS# Latency=3)
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
A10
A0~A9
DQM
DQ
A11
Activate
Command
Bank A
Ax
Ax+1
Bx
Bx+1
Bx+3
Bx+4
Hi-Z
Read
Command
Bank A
RAx
RAx
Ax+1Ax+2 Ax-2
Ax-1
Bx+2
Bx+5
Activate
Command
Bank B
Burst Stop
Command
CBx
High
Read
Command
Bank B
Precharge
Command
Bank B
RBx
CAx
RBy
RBy
Ax
The burst counter wraps
from the highest order
page address back to zero
during this time interval
Full Page burst operation does not
terminate when the burst length is
satisfied; the burst counter
increments and continues
bursting beginning with the
starting address.
Activate
Command
Bank B
t
CK3
t
RP
RBx
相關(guān)PDF資料
PDF描述
T431616D-7CG 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D-7S 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D-7SG 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616E 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616E-7C 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
T431616D-7CG 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D-7S 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D-7SG 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616E 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616E-7C 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM