參數(shù)資料
型號: T431616C-7S
廠商: TM Technology, Inc.
英文描述: 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
中文描述: 100萬× 16內(nèi)存為512k × 16Bit的X 2Banks同步DRAM
文件頁數(shù): 22/30頁
文件大?。?/td> 720K
代理商: T431616C-7S
TE
CH
tm
Read & Write Cycle with Auto Precharge @ Burst Length = 4
0
1
2
3
4
5
T431616C
TM Technology Inc. reserves the right
P.22
to change products or specifications without notice.
Publication Date: AUG. 2004
Revision: A
C L O C K
C K E
C S
R A S
C A S
A D D R
B A
A 1 0 /A P
C L = 2
C L = 3
W E
6
7
8
9
1 0
1 1
1 2
1 3
1 4
1 5
1 6
1 7
1 8
1 9
H IG H
D Q M
D Q
:D o n 't c a re
R o w A c tiv e
(A -B a n k )
R o w A c tiv e
(B -B a n k )
R e a d w ith A u to
p re c h a rg e (A -
B a n k )
C L = 2 A u to
P re c h a rg e S ta rt
P o in t (A -B a n k )
C L = 3 A u to
P re c h a rg e S ta rt
P o in t (A -B a n k )
W rite w ith A u to
P re c h a rg e (B -
B a n k )
A u to P re c h a rg e
S ta rt P o in t (A -
B a n k )
R a
R b
C a
C b
R a
R b
Q a 0
Q a 1
Q a 2
Q a 3
Q a 0
Q a 1
Q a 2
Q a 3
D b 0
D b 0
D b 1
D b 1
D b 2
D b 2
D b 3
D b 3
*Note : 1.
t
CDL
should be controlled to meet minimum
t
RAS
before internal precharge start.
(In the case of Burst Length = 1 & 2 and BRSW mode)
相關(guān)PDF資料
PDF描述
T431616C-7SG 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D-5C 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D-5CG 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D-5S 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
T431616C-7SG 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D-5C 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D-5CG 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D-5S 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM