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參數(shù)資料
| 型號： | T431616B-20S |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| 中文描述： | 100萬× 16內(nèi)存為512k × 16Bit的X 2Banks同步DRAM |
| 文件頁數(shù)： | 25/31頁 |
| 文件大?。?/td> | 567K |
| 代理商： | T431616B-20S |
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TE
CH
tm
Write Interrupted by Prechareg Command & Write Burst Stop Cycle @ Burst Length=Full Page
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T431616B
Taiwan Memory Technology, Inc. reserves the right
P.25
to change products or specifications without notice.
Publication Date: JUL. 2001
Revision:A
C L O C K
C K E
C S
R A S
C A S
A D D R
BA
A 1 0 / A P
D Q
W E
D Q M
9
1 0
1 1
1 2
1 3
1 4
1 5
1 6
1 7
1 8
1 9
H I G H
:Don't care
Row Active
(A-Bank)
Write (A-
Bank)
Burst Stop
Write (A-
Bank)
Precharge
(A-Bank)
R A a
C A a
C A b
R A a
DAa0
DAa1
DAa2
DAa3
DAa4
DAb0
DAb1
DAb2
DAb3
DAb4
DAb5
*Note3
t
BDL
t
RDL
*Note : 1. Burst can’t end in full page mode, so auto precharge can’t issue.
2. Data-in at the cycle of interrupted by precharge can not be written into the corresponding memory cell.
It is defined by AC parameter of
t
RDL
.
DQM at write interrupted by precharge command is needed to prevent invalid write.
Input data after Row precharge cycle will be masked internally.
3. Burst stop is valid at every burst length.
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| T431616C | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-6S | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-6SG | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-7S | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-7SG | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| T431616C | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-6S | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-6SG | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-7S | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-7SG | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
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