參數(shù)資料
型號: T431616B-20S
廠商: TM Technology, Inc.
英文描述: 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
中文描述: 100萬× 16內(nèi)存為512k × 16Bit的X 2Banks同步DRAM
文件頁數(shù): 24/31頁
文件大小: 567K
代理商: T431616B-20S
TE
CH
tm
Read Interrupted by Precharge Command & Read Burst Stop Cycle @ Burst Length=Full Page
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T431616B
Taiwan Memory Technology, Inc. reserves the right
P.24
to change products or specifications without notice.
Publication Date: JUL. 2001
Revision:A
C L O C K
C K E
C S
R A S
C A S
A D D R
B A
A 1 0 / A P
C L = 2
C L = 3
W E
8
9
1 0
1 1
1 2
1 3
1 4
1 5
1 6
1 7
1 8
1 9
H I G H
D Q M
D Q
: D o n ' t c a r e
R A a
C A a
C A b
R A a
QAa0
QAa1
QAa2
QAa3
QAa4
QAa0
QAa1
QAa2
QAa3
QAa4
QAb0
QAb0
QAb1
QAb1
QAb2
QAb3
QAb2
QAb4
QAb3
QAb5
QAb4
QAb5
*Note2
1
2
2
1
Row Active
(A-Bank)
Read (A-
Bank)
Read (A-
Bank)
Burst Stop
Precharge
(A-Bank)
*Note : 1. Burst can’t end in full page mode, so auto precharge can’t issue.
2. About the valid DQs after burst stop, it is same as the case of RAS interrupt.
Both cases are illustrated above timing diagram. See the lable 1,2 on them.
But at burst write, burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of ‘Full Page write burst stop cycle’.
3. Burst stop is valid at every burst length.
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參數(shù)描述
T431616C 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616C-6S 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
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T431616C-7S 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
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