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參數(shù)資料
| 型號(hào)： | T14M256A-8J |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 32K X 8 HIGH SPEED CMOS STATIC RAM |
| 中文描述： | 32K的乘八高速CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 7/9頁(yè) |
| 文件大?。?/td> | 74K |
| 代理商： | T14M256A-8J |
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CH
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Notes: 1. During this period, I/O pins are in the output state, so input signals of opposite phase to the outputs
should not be applied.
2. The data output from
D
OUT
are the same as the data written to
D
IN
during the write cycle.
3.
D
OUT
provides the read data for the next address.
4. Transition is measured
±
500 mV from steady state with
C
L
= 5pF. This parameter is
guaranteed but not 100% tested.
5. If OE is low during a WE controlled write cycle, the write pulse width must be the larger of
tWP or (tWHZ + tDW) to allow the I/O drivers to turn off and data to be placed on the bus for the
required tDW. If
OE
is high during a
WE
controlled write cycle, this requirement does not
apply and the write pulse can be as short as the specified tWP.
T14M256A
Taiwan Memory Technology, Inc. reserves the right
P. 7
to change products or specifications without notice.
Publication Date: SEP. 2001
Revision: G
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| T14M256A-8P | 制造商:TMT 制造商全稱:TMT 功能描述:32K X 8 HIGH SPEED CMOS STATIC RAM |
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