參數(shù)資料
型號(hào)： T14M256A-8J
廠商： TM Technology, Inc.
英文描述： 32K X 8 HIGH SPEED CMOS STATIC RAM
中文描述： 32K的乘八高速CMOS靜態(tài)RAM
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 74K
代理商： T14M256A-8J
TE
CH
tm
DC CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS
T14M256A
Taiwan Memory Technology, Inc. reserves the right
P. 2
to change products or specifications without notice.
Publication Date: SEP. 2001
Revision: G
PARAMETER
RATING
-0.5 to + 6
-0.5 to Vcc +0.5
1.0
-60 to +150
UNIT
V
V
W
°
C
Supply Voltage to Vss Potential
Inputs to Vss Potential
Power Dissipation
Storage Temperature
RECOMMENDED OPERATING CONDITIONS
PARAMETER
Supply Voltage
Input Voltage, low
Input Voltage, high
Ambient Temperature
Note:
V
IL
(min.) = -2.0V for pulse width
≤
20ns,
V
IH
(max.) = +7.0V for pulse width
≤
20ns.
TRUTH TABLE
SYM
Vcc
V
IL
V
IH
T
A
MIN
Typ-5%
-0.3
2.2
0
TYP
5
-
-
-
MAX
Typ+5%
0.8
Vcc+0.3
70
UNIT
V
V
V
°
C
CS
H
L
L
L
OE
X
H
L
X
WE
X
H
H
L
MODE
Not Selected
Output Disable
Read
Write
I/O1- I/O8
High-Z
High-Z
Data Out
Data In
Vcc
I
SB,
I
SB1
Icc
Icc
Icc
OPERATING CHARACTERISTICS
(Vcc = 5V
±
5%, Vss = 0V, Ta = 0 to 70
°
C)
PARAMETER
Input Leakage Current
SYM.
I
LI
TEST CONDITIONS
Vin=Vss to Vcc
V
I/O
=Vss to Vcc ,
CS
=
V
IH
or
OE
=
V
IH
or
WE
= V
IL
I
OL
= + 8.0mA
I
OH
= - 4.0mA
CS=
V
IL
, I/O=0mA
Cycle = MIN.
Duty = 100%
MIN. TYP. MAX. UNIT
-10
-
-10
-
+10
+10
uA
uA
Output Leakage Current
I
LO
Output Low Voltage
Output High Voltage
V
OL
V
OH
-
-
-
-
-
-
-
-
-
0.4
-
125
120
110
100
90
15
V
V
mA
mA
mA
mA
mA
mA
2.4
-
-
-
-
-
-
-7
-8
-10
-12
-15
Operating Power
Supply Current
Icc
I
SB
I
SB1
CS
=
V
IH
, Cycle=MIN, Duty=100%
CS
≥
Vcc
-0.2V
Standby Power
Supply Current
-
-
2
mA
Note:
Typical characteristics are at Vcc = 5V, Ta = 25
°
C
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