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參數(shù)資料
| 型號(hào)： | STW8NA60 |
| 廠(chǎng)商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| 中文描述： | ? -快速通道增強(qiáng)型功率MOS器件 |
| 文件頁(yè)數(shù)： | 10/10頁(yè) |
| 文件大?。?/td> | 124K |
| 代理商： | STW8NA60 |
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are not authorized for use as critical components inlife support devices or systems without express written approval of STMicroelectronics.
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STW8NA60-STH8NA60FI
10/10
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| STH8NA60FI | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STH8NA80 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| STW8NA80 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| STH8NA80FI | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| STHS2375A | IEEE 802.3af PoE Powered Device (PD) Interface Controller(IEEE802.3af PoE PD(受電設(shè)備)接口控制器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STW8NA80 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| STW8NB100 | 功能描述:MOSFET RO 511-STW11NK100Z RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW8NB80 | 功能描述:MOSFET N-Ch 800 Volt 8 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW8NB90 | 功能描述:MOSFET N-CH 900V 8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW8NC70Z | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 700V - 1.1 ohm - 7A TO-247 Zener-Protected PowerMESH⑩III MOSFET |
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