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參數(shù)資料
| 型號(hào)： | STW5NA100 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode Power MOS Transistors(N溝道增強(qiáng)模式快速功率MOS晶體管) |
| 中文描述： | N溝道增強(qiáng)模式功率MOS晶體管（不適用溝道增強(qiáng)模式快速功率馬鞍山晶體管） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 98K |
| 代理商： | STW5NA100 |
THERMAL DATA
TO-247
ISOWATT218
R
thj-case
Thermal Resistance Junction-case Max
0.83
2.1
o
C/W
o
C/W
o
C/W
o
C
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
30
0.1
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
4.2
A
E
AS
160
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A V
GS
= 0
1000
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating T
c
= 100
o
C
50
250
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
30 V
±
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
Static Drain-source On
Resistance
V
DS
= V
GS
I
D
= 250
μ
A
2.25
3
3.75
V
R
DS(on)
V
GS
= 10V I
D
= 2.1 A
2.9
3.5
I
D(on)
On State Drain Current V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
4.2
A
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 2.1 A
2
5.5
S
C
iss
C
oss
C
rss
V
DS
= 25 V f = 1 MHz V
GS
= 0
1650
127
31
2150
165
41
pF
pF
pF
STW5NA100-STH5NA100FI
2/6
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| STH5NA100 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
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| STH60N10FI | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STH7NA100FI | N-Channel Enhancement Mode Power MOS Transistors(N溝道增強(qiáng)模式功率MOS晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STW5NA90 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| STW5NB100 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-247 |
| STW5NB100 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-247 |
| STW5NB90 | 功能描述:MOSFET RO 511-STW7NK90Z RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW5NK100Z | 功能描述:MOSFET N-Ch 1000 Volt 3.5 A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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