參數(shù)資料
型號: STW45NM50FD
廠商: 意法半導體
英文描述: N-CHANNEL 500V - 0.07ohm - 45A TO-247 FDmesh⑩Power MOSFET With FAST DIODE
中文描述: N溝道500V - 0.07ohm - 45A條至247 FDmesh⑩功率MOSFET,快速二極管
文件頁數(shù): 3/8頁
文件大?。?/td> 255K
代理商: STW45NM50FD
3/8
STW45NM50FD
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Test Conditions
V
DD
= 250V, I
D
= 22.5A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 400V, I
D
= 45A,
V
GS
= 10V
Min.
Typ.
Max.
Unit
28
ns
t
r
Rise Time
28
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
92
120
nC
Gate-Source Charge
22
nC
Gate-Drain Charge
40
nC
Parameter
Test Conditions
V
DD
= 400V, I
D
= 45A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 3)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
11
ns
Fall Time
25
ns
Cross-over Time
44
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
45
A
Source-drain Current (pulsed)
180
A
Forward On Voltage
I
SD
= 45A, V
GS
= 0
I
SD
= 45A, di/dt = 100A/μs,
V
DD
= 100V
(see test circuit, Figure 5)
1.5
V
Reverse Recovery Time
245
ns
Reverse Recovery Charge
2.2
μC
Reverse Recovery Current
18
A
Safe Operating Area
Thermal Impedence
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