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參數(shù)資料
| 型號： | STW45NM50FD |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 500V - 0.07ohm - 45A TO-247 FDmesh⑩Power MOSFET With FAST DIODE |
| 中文描述： | N溝道500V - 0.07ohm - 45A條至247 FDmesh⑩功率MOSFET，快速二極管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 255K |
| 代理商： | STW45NM50FD |
STW45NM50FD
2/8
THERMAL DATA
Rthj-case
Rthj-amb
T
l
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 35 V)
ELECTRICAL CHARACTERISTICS
(TCASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON
(1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
0.3
30
°C/W
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Parameter
Max Value
22.5
Unit
A
800
mJ
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
500
Typ.
Max.
Unit
V
V
DS
= Max Rating
10
μA
100
μA
V
GS
= ±30V
±100
nA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 22.5A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
3
4
5
V
Static Drain-source On
Resistance
0.07
0.10
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 22.5A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
20
Max.
Unit
S
Forward Transconductance
C
iss
C
oss
C
rss
Input Capacitance
3600
pF
Output Capacitance
680
pF
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Gate Input Resistance
82
pF
C
oss eq.
(3)
V
GS
= 0V, V
DS
= 0V to 400V
350
pF
R
G
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
2
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| STW45NM50FD_09 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 500 V, 0.07 Ω, 45 A, TO-247 FDmesh? Power MOSFET (with fast diode) |
| STW45NM60 | 功能描述:MOSFET N-Ch 650 Volt 45 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| STW47NM50 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 0.065ohm - 45A TO-247 MDmesh⑩Power MOSFET |
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