參數(shù)資料
型號(hào): STW10NC60
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET
中文描述: N溝道600V的- 0.6ohm - 10A條- TO-247/ISOWATT218 PowerMesh第二MOSFET的⑩
文件頁數(shù): 3/9頁
文件大?。?/td> 337K
代理商: STW10NC60
3/9
STW10NC60 / STH10NC60FI
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
t
d(on)
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Parameter
Test Conditions
V
DD
= 300V, I
D
= 4.5 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
Min.
Typ.
20
Max.
Unit
ns
Turn-on Delay Time
t
r
Rise Time
16
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
V
DD
= 480V, I
D
= 9.0 A,
V
GS
= 10V
55
77
nC
Gate-Source Charge
4.5
nC
Gate-Drain Charge
31
nC
Parameter
Test Conditions
V
DD
= 300 V, I
D
= 4.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 480V, I
D
= 9.0 A,
R
G
= 4.7
,
V
GS
= 10V
(Inductive Load see, Figure 5)
Min.
Typ.
64
32
Max.
Unit
ns
ns
Turn-off Delay Time
Fall Time
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
19
13
32
ns
ns
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
10
A
Source-drain Current (pulsed)
40
A
Forward On Voltage
I
SD
= 9 A, V
GS
= 0
I
SD
= 9 A, di/dt = 100A/μs,
V
DD
= 100V, Tj = 150°C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
600
ns
Reverse Recovery Charge
4.7
μ
C
Reverse Recovery Current
15.5
A
Safe Operating Area for ISOWATT218
Safe Operating Area for TO-247
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參數(shù)描述
STW10NC60 制造商:STMicroelectronics 功能描述:MOSFET N TO-247
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