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參數(shù)資料
| 型號(hào)： | STU13NB60 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET) |
| 中文描述： | N溝道增強(qiáng)模式PowerMESHTM MOSFET的（不適用溝道增強(qiáng)模式MOSFET的） |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | STU13NB60 |
STU13NB60
N-CHANNEL ENHANCEMENT MODE
PowerMESH
MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.4
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERYLOW INTRINSIC CAPACITANCES
I
GATECHARGE MINIMIZED
I
±
30V GATE TO SOURCE VOLTAGE RATING
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process,
SGS-Thomson
advanced
family
of
power
outstanding
performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
has
designed
MOSFETs
The
new
an
with
patent
APPLICATIONS
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
This ispreliminary information on a new product now in development or undergoing evaluation. Details are subject to changewithout notice.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0)
600
V
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
600
V
V
GS
±
30
V
I
D
12.6
A
I
D
7.9
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
50.4
A
P
tot
160
W
Derating Factor
1.28
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
4.5
V/ns
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
150
(
1
) I
SD
≤
13A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
October 1997
TYPE
V
DSS
R
DS(on)
< 0.45
I
D
STU13NB60
600 V
12.6 A
123
Max220
1/6
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