參數(shù)資料
型號(hào)： STU8NB90
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 900V - 0.7ohm - 8.9A - Max220 PowerMESH MOSFET
中文描述： N溝道900V - 0.7ohm - 8.9A - Max220 PowerMESH MOSFET的
文件頁數(shù)： 1/5頁
文件大?。?/td> 48K
代理商： STU8NB90
STU8NB90
N-CHANNEL 900V - 0.7
- 8.9A - Max220
PowerMESH
MOSFET
ADVANCE DATA
I
TYPICAL R
DS(on)
= 0.7
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
I
±
30V GATE TO SOURCE VOLTAGE RATING
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
I
SWITCH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
900
V
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
900
±
30
8.9
V
V
A
5.6
A
35
A
160
W
1.28
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
4.5
V/ns
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area (
1
) I
SD
≤
8.9 A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
150
December 1998
TYPE
V
DSS
900 V
R
DS(on)
< 1
I
D
STU8NB90
8.9 A
123
Max220
1/5
相關(guān)PDF資料
PDF描述
STU9NA60 N-Channel Enhancement Mode Fast Power MOS Transistor(Ｎ溝道增強(qiáng)模式功率MOS晶體管)
STU9NB80 N-CHANNEL 800V - 0.85ohm - 9.3A - TO-247 PowerMESH MOSFET
STU9NC80Z N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET
STU9NC80 N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET
STU9NC80ZI N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STU8NC90Z 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 1.1ohm - 7.6A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET
STU8NC90ZI 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STU8NM50N 功能描述:MOSFET N-Ch 500V 0.73 Ohm 5A MDmesh II Mos RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STU8NM60ND 功能描述:MOSFET N-CH 6V 7A FDMESH FDMesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STU90N4F3 功能描述:MOSFET N-Ch, 40V-5.4ohms 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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